{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,5]],"date-time":"2024-09-05T02:08:46Z","timestamp":1725502126554},"reference-count":10,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2008,10]]},"DOI":"10.1109\/test.2008.4700616","type":"proceedings-article","created":{"date-parts":[[2008,12,10]],"date-time":"2008-12-10T17:55:58Z","timestamp":1228931758000},"page":"1-7","source":"Crossref","is-referenced-by-count":3,"title":["Direct Cell-Stability Test Techniques for an SRAM Macro with Asymmetric Cell-Bias-Voltage Modulation"],"prefix":"10.1109","author":[{"given":"A.","family":"Katayama","sequence":"first","affiliation":[]},{"given":"T.","family":"Yabe","sequence":"additional","affiliation":[]},{"given":"O.","family":"Hirabayashi","sequence":"additional","affiliation":[]},{"given":"Y.","family":"Takeyama","sequence":"additional","affiliation":[]},{"given":"K.","family":"Kushida","sequence":"additional","affiliation":[]},{"given":"T.","family":"Sasaki","sequence":"additional","affiliation":[]},{"given":"N.","family":"Otsuka","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2005.1609437"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1109\/TEST.2005.1584045"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.815862"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1109\/TEST.2004.1387366"},{"key":"7","first-page":"347","article-title":"variability in sub-loonm sram designs","author":"raymond","year":"2004","journal-title":"IEEE ICCAD"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1987.1052809"},{"journal-title":"International Technology Roadmap for Semiconductors","year":"2003","key":"5"},{"key":"4","first-page":"57","article-title":"statistical analysis of sram cell stability","author":"kanak","year":"2006","journal-title":"DAC"},{"key":"9","first-page":"15","article-title":"implications of fundamental threshold voltage variations for high-density sram and logic circuits","author":"david","year":"1994","journal-title":"Symp VLSI Tech"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDER.2006.307687"}],"event":{"name":"2008 IEEE International Test Conference","start":{"date-parts":[[2008,10,28]]},"location":"Santa Clara, CA","end":{"date-parts":[[2008,10,30]]}},"container-title":["2008 IEEE International Test Conference"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/4690905\/4700527\/04700616.pdf?arnumber=4700616","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,17]],"date-time":"2017-03-17T16:18:53Z","timestamp":1489767533000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/4700616\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2008,10]]},"references-count":10,"URL":"https:\/\/doi.org\/10.1109\/test.2008.4700616","relation":{},"subject":[],"published":{"date-parts":[[2008,10]]}}}