{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,22]],"date-time":"2024-10-22T23:32:37Z","timestamp":1729639957451,"version":"3.28.0"},"reference-count":23,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016,11]]},"DOI":"10.1109\/test.2016.7805874","type":"proceedings-article","created":{"date-parts":[[2017,1,5]],"date-time":"2017-01-05T22:22:46Z","timestamp":1483654966000},"page":"1-10","source":"Crossref","is-referenced-by-count":4,"title":["Memory repair for high fault rates"],"prefix":"10.1109","author":[{"given":"Panagiota","family":"Papavramidou","sequence":"first","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2009.4977291"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/VTEST.2004.1299258"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/VTS.2012.6231058"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/VTEST.2000.843856"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/VTS.2013.6548928"},{"key":"ref15","article-title":"Reducing Power Dissipation in Memory Repair for High Defect ensities","author":"papavramidou","year":"2013","journal-title":"Proceedings of IEEE European Test Symposium (ETS)"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TC.2015.2479618"},{"year":"0","key":"ref17"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1145\/1669112.1669172"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/VTS.2005.56"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/OLT.2000.856639"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/4.165332"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TEST.2001.966724"},{"key":"ref5","first-page":"1112","article-title":"Built-In self repair for embedded high-density SRAM","author":"kim","year":"1998","journal-title":"Proc Int Test Conference"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/DATE.2003.1253672"},{"key":"ref7","article-title":"Efficient built-in redundancy analysis for embedded memories with 2-D redundancy","volume":"14","author":"lu","year":"0","journal-title":"IEEE Trans on VLSI Systems"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.1989.56835"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TEST.2002.1041777"},{"key":"ref9","doi-asserted-by":"crossref","DOI":"10.1007\/978-1-4419-7958-2","article-title":"Nanoscale Memory Repair","author":"horiguchi","year":"2011","journal-title":"Springer Series Integrated Circuits and Systems"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/IOLTS.2015.7229853"},{"year":"0","key":"ref22"},{"key":"ref21","first-page":"343","article-title":"Fault Modelling and test algorithm development for Static Random Access Memories","author":"dekker","year":"1998","journal-title":"Proc IEEE International Test Conference"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/IOLTS.2013.6604082"}],"event":{"name":"2016 IEEE International Test Conference (ITC)","start":{"date-parts":[[2016,11,15]]},"location":"Fort Worth, TX, USA","end":{"date-parts":[[2016,11,17]]}},"container-title":["2016 IEEE International Test Conference (ITC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7794484\/7805805\/07805874.pdf?arnumber=7805874","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,9,17]],"date-time":"2019-09-17T06:07:21Z","timestamp":1568700441000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7805874\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,11]]},"references-count":23,"URL":"https:\/\/doi.org\/10.1109\/test.2016.7805874","relation":{},"subject":[],"published":{"date-parts":[[2016,11]]}}}