{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,11]],"date-time":"2026-06-11T16:12:08Z","timestamp":1781194328910,"version":"3.54.1"},"reference-count":14,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"11","license":[{"start":{"date-parts":[[2017,11,1]],"date-time":"2017-11-01T00:00:00Z","timestamp":1509494400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/3.0\/legalcode"}],"funder":[{"name":"U.K. Engineering and Physical Sciences Research Council National Centre for Power Electronics"},{"name":"\u201cConverters Theme\u201d","award":["EP\/K035096\/1"],"award-info":[{"award-number":["EP\/K035096\/1"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Ind. Electron."],"published-print":{"date-parts":[[2017,11]]},"DOI":"10.1109\/tie.2017.2721882","type":"journal-article","created":{"date-parts":[[2017,8,7]],"date-time":"2017-08-07T18:10:01Z","timestamp":1502129401000},"page":"9001-9011","source":"Crossref","is-referenced-by-count":218,"title":["Predicting SiC MOSFET Behavior Under Hard-Switching, Soft-Switching, and False Turn-On Conditions"],"prefix":"10.1109","volume":"64","author":[{"given":"Md Rishad","family":"Ahmed","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Rebecca","family":"Todd","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Andrew J.","family":"Forsyth","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2005.869743"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2012.2195332"},{"key":"ref12","article-title":"C2M0080120D silicon carbide power MOSFET C2M MOSFET technology","year":"2015"},{"key":"ref13","article-title":"C4D10120D silicon carbide Schottky diode","year":"2014"},{"key":"ref14","article-title":"SCS230KE2 SiC Schottky Barrier Diode","year":"2015"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2016.7854835"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2362657"},{"key":"ref6","article-title":"Limiting cross-conduction current in synchronous buck converter designs","author":"elbanhawy","year":"2005"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2015.7309974"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2014.2304454"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/PESC.2007.4342122"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"1798","DOI":"10.1109\/TED.2008.926650","article-title":"Characterization, modeling, and application of 10-kV SiC MOSFET","volume":"55","author":"jun","year":"2008","journal-title":"IEEE Trans Electron Devices"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2295774"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2015.2491880"}],"container-title":["IEEE Transactions on Industrial Electronics"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/41\/8062949\/08003485.pdf?arnumber=8003485","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T16:26:18Z","timestamp":1642004778000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8003485\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,11]]},"references-count":14,"journal-issue":{"issue":"11"},"URL":"https:\/\/doi.org\/10.1109\/tie.2017.2721882","relation":{},"ISSN":["0278-0046","1557-9948"],"issn-type":[{"value":"0278-0046","type":"print"},{"value":"1557-9948","type":"electronic"}],"subject":[],"published":{"date-parts":[[2017,11]]}}}