{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,12]],"date-time":"2026-02-12T17:42:28Z","timestamp":1770918148405,"version":"3.50.1"},"reference-count":31,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"11","license":[{"start":{"date-parts":[[2017,11,1]],"date-time":"2017-11-01T00:00:00Z","timestamp":1509494400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"funder":[{"DOI":"10.13039\/501100001809","name":"General Program of the National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["51577010"],"award-info":[{"award-number":["51577010"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"crossref","award":["2016YFE0131700"],"award-info":[{"award-number":["2016YFE0131700"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Ind. Electron."],"published-print":{"date-parts":[[2017,11]]},"DOI":"10.1109\/tie.2017.2721885","type":"journal-article","created":{"date-parts":[[2017,7,10]],"date-time":"2017-07-10T21:12:24Z","timestamp":1499721144000},"page":"8992-9000","source":"Crossref","is-referenced-by-count":42,"title":["Nonsegmented PSpice Circuit Model of GaN HEMT With Simulation Convergence Consideration"],"prefix":"10.1109","volume":"64","author":[{"given":"Hong","family":"Li","sequence":"first","affiliation":[]},{"given":"Xingran","family":"Zhao","sequence":"additional","affiliation":[]},{"given":"Wenzhe","family":"Su","sequence":"additional","affiliation":[]},{"given":"Kai","family":"Sun","sequence":"additional","affiliation":[]},{"given":"Xiaojie","family":"You","sequence":"additional","affiliation":[]},{"given":"Trillion Q.","family":"Zheng","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref31","first-page":"37","article-title":"Solving temperature parameter modeling of silicon carbide MOSFET","volume":"33","author":"sun","year":"2013","journal-title":"Journal Of Chinese Electrical Engineering Science"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2264941"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2014.6856025"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2533165"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2013.6694483"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2205691"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/INTLEC.2015.7572432"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2016.2587766"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2016.7854840"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/LPT.2017.2685680"},{"key":"ref18","article-title":"EPC 2010_datasheet","year":"2013"},{"key":"ref19","article-title":"Fundamentals of gallium nitride power\n transistors","year":"0"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2012.2195332"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2016.2606443"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2266103"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2015.2495195"},{"key":"ref6","first-page":"1","article-title":"Study on the PSpice simulation model of SiC MOSFET base on its\n datasheet","author":"xu","year":"0","journal-title":"Proc IEEE Future Energy Electron Conf"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2013.6646849"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2409977"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2373373"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2368274"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2279212"},{"key":"ref9","first-page":"1","article-title":"Theoretical calculation and efficient simulations of power semiconductor AlGaN\/GaN HEMTs","author":"huang","year":"0","journal-title":"IEEE Conf on Electron on Devices and Solid-State Circuit"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2268900"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/22.3509"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2537835"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2016.2601487"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2011.2160525"},{"key":"ref23","first-page":"44","article-title":"Construction of nonlinear capacitance PSpice model","volume":"3","author":"wu","year":"1999","journal-title":"J Harbin Inst Technol"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2015.2460461"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2504726"}],"container-title":["IEEE Transactions on Industrial Electronics"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/41\/8062949\/07973023.pdf?arnumber=7973023","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T16:04:42Z","timestamp":1642003482000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7973023\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,11]]},"references-count":31,"journal-issue":{"issue":"11"},"URL":"https:\/\/doi.org\/10.1109\/tie.2017.2721885","relation":{},"ISSN":["0278-0046","1557-9948"],"issn-type":[{"value":"0278-0046","type":"print"},{"value":"1557-9948","type":"electronic"}],"subject":[],"published":{"date-parts":[[2017,11]]}}}