{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,27]],"date-time":"2025-10-27T20:43:53Z","timestamp":1761597833862,"version":"3.37.3"},"reference-count":26,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"11","license":[{"start":{"date-parts":[[2017,11,1]],"date-time":"2017-11-01T00:00:00Z","timestamp":1509494400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"funder":[{"name":"SPEED FP7 Large Project","award":["NMP3-LA-2013-604057"],"award-info":[{"award-number":["NMP3-LA-2013-604057"]}]},{"DOI":"10.13039\/501100003329","name":"Spanish Ministry of \u201cEconom\u00eda y Competitividad\u201d HiVolt-Tech","doi-asserted-by":"publisher","award":["TEC2014-54357-C2-1-R"],"award-info":[{"award-number":["TEC2014-54357-C2-1-R"]}],"id":[{"id":"10.13039\/501100003329","id-type":"DOI","asserted-by":"publisher"}]},{"name":"EU-ERDF (FEDER)"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Ind. Electron."],"published-print":{"date-parts":[[2017,11]]},"DOI":"10.1109\/tie.2017.2723865","type":"journal-article","created":{"date-parts":[[2017,7,5]],"date-time":"2017-07-05T18:04:14Z","timestamp":1499277854000},"page":"8962-8970","source":"Crossref","is-referenced-by-count":21,"title":["High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide"],"prefix":"10.1109","volume":"64","author":[{"given":"Victor","family":"Soler","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Maria","family":"Cabello","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Maxime","family":"Berthou","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Josep","family":"Montserrat","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jose","family":"Rebollo","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Philippe","family":"Godignon","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Andrei","family":"Mihaila","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Maria R.","family":"Rogina","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Alberto","family":"Rodriguez","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Javier","family":"Sebastian","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"journal-title":"TCAD Tool Suite Synopsys","year":"2006","key":"ref10"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.457-460.1275"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1063\/1.4824980"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2047239"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.821-823.749"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.858.671"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2336592"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.778-780.557"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2362768"},{"article-title":"Boron pasivation for improved channel mobility in 4H-SiC MOSFETs","year":"0","author":"isaacs-smith","key":"ref19"},{"year":"2016","key":"ref4"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2268900"},{"year":"2016","key":"ref6"},{"year":"2016","key":"ref5"},{"key":"ref8","first-page":"455","article-title":"Design and fabrication of high voltage 4H-SiC\n MOS transistors","author":"soler","year":"2015","journal-title":"Proc 22nd Seminario Anual Autom Electrón Ind Instrum (SAAEI)"},{"year":"2016","key":"ref7"},{"article-title":"SiC market and industry update","year":"0","author":"roussel","key":"ref2"},{"journal-title":"Silicon Carbide Power Devices","year":"2005","author":"baliga","key":"ref9"},{"year":"2012","key":"ref1","article-title":"Switches program overview"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.858.418"},{"article-title":"Implementation of high voltage silicon carbide rectifiers and\n switches","year":"2012","author":"berthou","key":"ref22"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1149\/1.3570857"},{"year":"2014","key":"ref24","article-title":"SiC power devices and modules"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2014.6964641"},{"key":"ref26","first-page":"283","article-title":"4.5 kV SiC power MOSFET with boron doped gate\n dielectric","author":"soler","year":"0","journal-title":"Proc Int Symp Power Semiconductor Devices ICs"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2016.7520819"}],"container-title":["IEEE Transactions on Industrial Electronics"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/41\/8062949\/07968463.pdf?arnumber=7968463","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T16:04:42Z","timestamp":1642003482000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7968463\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,11]]},"references-count":26,"journal-issue":{"issue":"11"},"URL":"https:\/\/doi.org\/10.1109\/tie.2017.2723865","relation":{},"ISSN":["0278-0046","1557-9948"],"issn-type":[{"type":"print","value":"0278-0046"},{"type":"electronic","value":"1557-9948"}],"subject":[],"published":{"date-parts":[[2017,11]]}}}