{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,16]],"date-time":"2026-03-16T18:03:19Z","timestamp":1773684199642,"version":"3.50.1"},"reference-count":33,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"1","license":[{"start":{"date-parts":[[2019,1,1]],"date-time":"2019-01-01T00:00:00Z","timestamp":1546300800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,1,1]],"date-time":"2019-01-01T00:00:00Z","timestamp":1546300800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,1,1]],"date-time":"2019-01-01T00:00:00Z","timestamp":1546300800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Ind. Electron."],"published-print":{"date-parts":[[2019,1]]},"DOI":"10.1109\/tie.2018.2823689","type":"journal-article","created":{"date-parts":[[2018,4,5]],"date-time":"2018-04-05T23:52:39Z","timestamp":1522972359000},"page":"551-560","source":"Crossref","is-referenced-by-count":32,"title":["On <inline-formula>\n                     <tex-math notation=\"LaTeX\">$V_{{\\text{ce}}}$<\/tex-math>\n                  <\/inline-formula> Method: <italic>In Situ<\/italic> Temperature Estimation and Aging Detection of High-Current IGBT Modules Used in Magnet Power Supplies for Particle Accelerators"],"prefix":"10.1109","volume":"66","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-7300-3443","authenticated-orcid":false,"given":"Panagiotis","family":"Asimakopoulos","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2223-3409","authenticated-orcid":false,"given":"Konstantinos","family":"Papastergiou","sequence":"additional","affiliation":[]},{"given":"Torbjorn","family":"Thiringer","sequence":"additional","affiliation":[]},{"given":"Massimo","family":"Bongiorno","sequence":"additional","affiliation":[]},{"given":"Gilles","family":"Le Godec","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref33","first-page":"1","article-title":"Lifetime\n investigation of high power IGBT modules","author":"due","year":"0","journal-title":"Proc Eur Conf Power Electron Appl"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1139\/v95-195"},{"key":"ref31","year":"2015","journal-title":"Version 2 1 Power integrations Preliminary Description and Application Manual Power Integrations Switzerland GmbH"},{"key":"ref30","year":"2017","journal-title":"9100 BZX55-Series"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2464714"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2011.2125803"},{"key":"ref12","doi-asserted-by":"crossref","first-page":"1772","DOI":"10.1016\/j.microrel.2006.07.058","article-title":"New technique for the measurement of the static and of\n the transient junction temperature in IGBT devices under operating conditions","volume":"46","author":"berlini","year":"2011","journal-title":"Microelectron Rel"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2011.2178433"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2012.2196894"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2017.2690500"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/EPE.2016.7695453"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2008.918399"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2251358"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2016.2621757"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-642-11125-9"},{"key":"ref4","first-page":"1","article-title":"Power cycling lifetime of advanced power modules for different temperature swings","author":"scheuermann","year":"0","journal-title":"Proc Int Conf Integr Power Syst"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2418711"},{"key":"ref3","first-page":"1","article-title":"Separating failure modes in power cycling tests","author":"schmidt","year":"0","journal-title":"Proc 7th Int Conf Integr Power Syst"},{"key":"ref6","first-page":"802","article-title":"Investigations on the VCE(T)-method to determine the junction temperature by using the chip\n itself as sensor","author":"scheuermann","year":"0","journal-title":"Proc Int Conf Integr Power Syst"},{"key":"ref29","first-page":"353","article-title":"High precision current measurement for power converters","author":"cerqueira bastos","year":"0","journal-title":"Proc CAS-CERN Accel School Power Convert"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2011.2114313"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/EPE.2015.7309459"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/MIE.2014.2311829"},{"key":"ref2","first-page":"1","article-title":"Model for power cycling lifetime of IGBT modules – Various\n factors influencing lifetime","author":"bayerer","year":"0","journal-title":"Proc 5th Int Conf Integr Power Syst"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2014.2374575"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.23919\/EPE17ECCEEurope.2017.8099201"},{"key":"ref20","year":"2014","journal-title":"Doc no 5SYA1564-02"},{"key":"ref22","article-title":"Insulated-gate bipolar transistor\n collector-emitter saturation voltage measurement","year":"2015"},{"key":"ref21","first-page":"p.1","article-title":"Accuracy\n analysis of UCE(on)-based measurement of the inverter output current at higher motor speeds","author":"denk","year":"0","journal-title":"Proc 19th Appl Power Electron Conf"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.23919\/EPE17ECCEEurope.2017.8099155"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2016.2633578"},{"key":"ref26","first-page":"853","article-title":"On-line estimation of IGBT junction temperature using on-state voltage drop","author":"kim","year":"0","journal-title":"Proc IEEE Ind Appl Conf 33rd IAS Annu Meeting"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/EPE.2013.6634390"}],"container-title":["IEEE Transactions on Industrial Electronics"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/41\/8453958\/08331865.pdf?arnumber=8331865","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,13]],"date-time":"2022-07-13T20:42:26Z","timestamp":1657744946000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8331865\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,1]]},"references-count":33,"journal-issue":{"issue":"1"},"URL":"https:\/\/doi.org\/10.1109\/tie.2018.2823689","relation":{},"ISSN":["0278-0046","1557-9948"],"issn-type":[{"value":"0278-0046","type":"print"},{"value":"1557-9948","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019,1]]}}}