{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,25]],"date-time":"2026-03-25T19:22:25Z","timestamp":1774466545572,"version":"3.50.1"},"reference-count":24,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"2","license":[{"start":{"date-parts":[[2020,2,1]],"date-time":"2020-02-01T00:00:00Z","timestamp":1580515200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,2,1]],"date-time":"2020-02-01T00:00:00Z","timestamp":1580515200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,2,1]],"date-time":"2020-02-01T00:00:00Z","timestamp":1580515200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Ind. Electron."],"published-print":{"date-parts":[[2020,2]]},"DOI":"10.1109\/tie.2019.2907496","type":"journal-article","created":{"date-parts":[[2019,4,1]],"date-time":"2019-04-01T18:33:18Z","timestamp":1554143598000},"page":"1446-1454","source":"Crossref","is-referenced-by-count":28,"title":["A 2\u201310 MHz GaN HEMTs Half-Bridge Driver With Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications"],"prefix":"10.1109","volume":"67","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-9763-842X","authenticated-orcid":false,"given":"Renhui","family":"Yan","sequence":"first","affiliation":[]},{"given":"Jianxiong","family":"Xi","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1512-1492","authenticated-orcid":false,"given":"Lenian","family":"He","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2015.7369282"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.2014.6803507"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2018.2842768"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/MPEL.2017.2719220"},{"key":"ref14","author":"lidow","year":"2015","journal-title":"GaN Transistors for Efficient Power Conversion"},{"key":"ref15","first-page":"1","article-title":"16.7 A 20\ufffdV 8.4\ufffdW 20\ufffdMHz Four-Phase GaN DC-DC converter with fully on-chip dual-SR bootstrapped GaN FET Driver achieving 4ns constant propagation delay and 1ns switching rise time","author":"song","year":"0","journal-title":"Proc IEEE Int Solid-State Circuits Conf (ISSCC)"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2507860"},{"key":"ref17","article-title":"PLZ5V6B zener diodes permitting 500 mW power dissipation datasheet","year":"2016"},{"key":"ref18","article-title":"WP012: Dead-time optimization for maximum efficiency","year":"2013"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2015.7168992"},{"key":"ref4","article-title":"AN218254: Design considerations for EMI reduction in automotive power management systems","year":"2017"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2017.2672522"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2657579"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2012.2235859"},{"key":"ref8","article-title":"IRL6342PbF power transistor datasheet","year":"2011"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2016.2582685"},{"key":"ref2","article-title":"Automotive Wide VIN DC\/DC, power solutions for emerging applications","year":"2014"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/MIAS.2016.2600739"},{"key":"ref9","article-title":"EPC2014C-enhancement mode power transistor datasheet","year":"2015"},{"key":"ref20","first-page":"302","article-title":"16.8 A 3-to- 40V 10-to-30\ufffdMHz automotive-Use GaN driver with Active BST balancing and VSW dual-edge dead-time modulation achieving 8.3% efficiency improvement and 3.4ns constant propagation delay","author":"ke","year":"0","journal-title":"Proc IEEE Int Solid-State Circuits Conf (ISSCC)"},{"key":"ref22","first-page":"156","article-title":"Design of a under voltage lock out circuit with bandgap structure","author":"fuhua","year":"0","journal-title":"Proc 12th Intl Symp on Integrated Circuits"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/IECON.2017.8216095"},{"key":"ref24","first-page":"386","article-title":"A 3-to-40V VIN 10-to-50\ufffdMHz 12W Isolated GaN Driver with Self-Excited tdead Minimizer Achieving 0.2ns\/0.3ns tdead, 7.9% Minimum Duty Ratio and 50V\/ns CMTI","author":"ke","year":"0","journal-title":"Proc IEEE Int Solid-State Circuits Conf (ISSCC)"},{"key":"ref23","author":"allen","year":"2012","journal-title":"CMOS Analog Circuit Design"}],"container-title":["IEEE Transactions on Industrial Electronics"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/41\/8855152\/08678672.pdf?arnumber=8678672","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,4,27]],"date-time":"2022-04-27T13:52:18Z","timestamp":1651067538000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8678672\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,2]]},"references-count":24,"journal-issue":{"issue":"2"},"URL":"https:\/\/doi.org\/10.1109\/tie.2019.2907496","relation":{},"ISSN":["0278-0046","1557-9948"],"issn-type":[{"value":"0278-0046","type":"print"},{"value":"1557-9948","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,2]]}}}