{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,22]],"date-time":"2025-11-22T11:15:43Z","timestamp":1763810143368,"version":"3.37.3"},"reference-count":37,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"12","license":[{"start":{"date-parts":[[2020,12,1]],"date-time":"2020-12-01T00:00:00Z","timestamp":1606780800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,12,1]],"date-time":"2020-12-01T00:00:00Z","timestamp":1606780800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,12,1]],"date-time":"2020-12-01T00:00:00Z","timestamp":1606780800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"name":"Hong Kong RGC Research Impact Fund","award":["R6008-18"],"award-info":[{"award-number":["R6008-18"]}]},{"name":"Shenzhen Science and Technology Innovation Committee","award":["SZ-SZSTI1842"],"award-info":[{"award-number":["SZ-SZSTI1842"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Ind. Electron."],"published-print":{"date-parts":[[2020,12]]},"DOI":"10.1109\/tie.2019.2959512","type":"journal-article","created":{"date-parts":[[2019,12,18]],"date-time":"2019-12-18T20:50:26Z","timestamp":1576702226000},"page":"10284-10294","source":"Crossref","is-referenced-by-count":36,"title":["Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN\/SiC Cascode Devices"],"prefix":"10.1109","volume":"67","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-9741-8387","authenticated-orcid":false,"given":"Yuru","family":"Wang","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gang","family":"Lyu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6124-0110","authenticated-orcid":false,"given":"Jin","family":"Wei","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6455-9300","authenticated-orcid":false,"given":"Zheyang","family":"Zheng","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1296-3675","authenticated-orcid":false,"given":"Jiabei","family":"He","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2486-7018","authenticated-orcid":false,"given":"Jiacheng","family":"Lei","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0659-2022","authenticated-orcid":false,"given":"Kevin J.","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2900154"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/16.906451"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.814974"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.2014.6803668"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.2014.6803503"},{"year":"0","key":"ref36","article-title":"SiC MOSFET double pulse fixture"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2930315"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2852699"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.23919\/EPE17ECCEEurope.2017.8098928"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/55.915604"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2018.8393597"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2557811"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2283144"},{"year":"0","key":"ref15"},{"year":"0","key":"ref16"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2268900"},{"year":"0","key":"ref18"},{"year":"0","key":"ref19"},{"year":"0","key":"ref28"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2018.8393694"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2016.2610460"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2657579"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/SMICND.2001.967477"},{"key":"ref29","first-page":"48","article-title":"Robustness of SiC JFETs and cascodes","author":"bhalla","year":"2015"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2276127"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2268577"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2016.2613930"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2017.2652401"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131619"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2010.2072896"},{"key":"ref20","first-page":"22","article-title":"Switching behavior of USCi's SiC cascodes","author":"bhalla","year":"2015"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2398856"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2018.8569055"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.7567\/1882-0786\/ab4741"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2016.2532799"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.908601"},{"year":"2017","key":"ref25","article-title":"Efficient Power Conversion"}],"container-title":["IEEE Transactions on Industrial Electronics"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/41\/9174688\/08936541.pdf?arnumber=8936541","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,4,27]],"date-time":"2022-04-27T13:54:40Z","timestamp":1651067680000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8936541\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,12]]},"references-count":37,"journal-issue":{"issue":"12"},"URL":"https:\/\/doi.org\/10.1109\/tie.2019.2959512","relation":{},"ISSN":["0278-0046","1557-9948"],"issn-type":[{"type":"print","value":"0278-0046"},{"type":"electronic","value":"1557-9948"}],"subject":[],"published":{"date-parts":[[2020,12]]}}}