{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,12]],"date-time":"2026-06-12T17:02:41Z","timestamp":1781283761317,"version":"3.54.1"},"reference-count":30,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"3","license":[{"start":{"date-parts":[[2023,3,1]],"date-time":"2023-03-01T00:00:00Z","timestamp":1677628800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2023,3,1]],"date-time":"2023-03-01T00:00:00Z","timestamp":1677628800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,3,1]],"date-time":"2023-03-01T00:00:00Z","timestamp":1677628800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Ind. Electron."],"published-print":{"date-parts":[[2023,3]]},"DOI":"10.1109\/tie.2022.3159920","type":"journal-article","created":{"date-parts":[[2022,4,20]],"date-time":"2022-04-20T19:32:04Z","timestamp":1650483124000},"page":"2231-2240","source":"Crossref","is-referenced-by-count":19,"title":["Thermal Imbalance Among Paralleling Chips in Power Modules and the Impact From Traction Inverter System View"],"prefix":"10.1109","volume":"70","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-3325-0079","authenticated-orcid":false,"given":"Xiang","family":"Li","sequence":"first","affiliation":[{"name":"Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yangang","family":"Wang","sequence":"additional","affiliation":[{"name":"Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Guiqin","family":"Chang","sequence":"additional","affiliation":[{"name":"Research and Development Center, Zhuzhou CRRC Times Semiconductor Ltd., Zhuzhou, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xuejiao","family":"Huang","sequence":"additional","affiliation":[{"name":"Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wei","family":"Gong","sequence":"additional","affiliation":[{"name":"Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yiyi","family":"Chen","sequence":"additional","affiliation":[{"name":"Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhongxu","family":"Wang","sequence":"additional","affiliation":[{"name":"Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Matthew","family":"Packwood","sequence":"additional","affiliation":[{"name":"Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Haihui","family":"Luo","sequence":"additional","affiliation":[{"name":"Research and Development Center, Zhuzhou CRRC Times Semiconductor Ltd., Zhuzhou, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0006-9302","authenticated-orcid":false,"given":"Guoyou","family":"Liu","sequence":"additional","affiliation":[{"name":"Research and Development Center, Zhuzhou CRRC Times Semiconductor Ltd., Zhuzhou, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2018.8393651"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/ITHERM.2018.8419490"},{"key":"ref11","first-page":"1","article-title":"Modelling the thermal coupling between internal power semiconductor dies of a water-cooled 3300 V\/1200 A HiPak IGBT module","author":"drofenik","year":"0","journal-title":"Proc Int Conf Exhibit Power Electron"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2014.11.001"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TCPMT.2014.2353695"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TEC.2016.2614526"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2019.8912889"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2013.6646915"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2020.2995698"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1002\/tee.20533"},{"key":"ref19","first-page":"161","article-title":"Development of liquid cooling system with integrated traction converters and auxiliary power supplies for 200-km\/h commuter trains","volume":"66","author":"katagiri","year":"2017","journal-title":"Hitachi Rev"},{"key":"ref4","first-page":"1","article-title":"High power density oscillation free 1800 A\/3300 V E2 IGBT module with TMOS IGBT and PIC FRD technology","author":"ning","year":"0","journal-title":"Proc Int Conf Exhibit Power Electron"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2020.113800"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2019.2945299"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/ICPE.2015.7167881"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2016.7520809"},{"key":"ref29","first-page":"79","article-title":"Thermal management technology for IGBT modules","volume":"56","author":"nishimura","year":"2010","journal-title":"Fuji Elect Rev"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2020.2978584"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2020.2980240"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TCAPT.2004.828563"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2018.2839625"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2019.2959483"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2018.06.031"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.3390\/en12244676"},{"key":"ref22","year":"2020","journal-title":"Mentor Graphics Power Tester Guide"},{"key":"ref21","year":"2020","journal-title":"Ansys Icepak Help Document"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TCPMT.2019.2923256"},{"key":"ref23","year":"2020","journal-title":"Ansys Simplorer Help Document"},{"key":"ref26","first-page":"1","article-title":"Design of high voltage 140X100 footprint IGBT module","author":"li","year":"0","journal-title":"Proc Int Conf Therm Mech Multi-Phys Simul Exp Micro-Electron Micro-Syst"},{"key":"ref25","author":"volke","year":"2017","journal-title":"IGBT Modules-Technologies Driver and Application"}],"container-title":["IEEE Transactions on Industrial Electronics"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/41\/9955034\/09760731.pdf?arnumber=9760731","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,12,12]],"date-time":"2022-12-12T19:23:49Z","timestamp":1670873029000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9760731\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,3]]},"references-count":30,"journal-issue":{"issue":"3"},"URL":"https:\/\/doi.org\/10.1109\/tie.2022.3159920","relation":{},"ISSN":["0278-0046","1557-9948"],"issn-type":[{"value":"0278-0046","type":"print"},{"value":"1557-9948","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,3]]}}}