{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,29]],"date-time":"2026-07-29T14:31:25Z","timestamp":1785335485552,"version":"3.55.0"},"reference-count":28,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"9","license":[{"start":{"date-parts":[[2023,9,1]],"date-time":"2023-09-01T00:00:00Z","timestamp":1693526400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2023,9,1]],"date-time":"2023-09-01T00:00:00Z","timestamp":1693526400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,9,1]],"date-time":"2023-09-01T00:00:00Z","timestamp":1693526400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"name":"National Key R&D Program of China","award":["2022YFE0102500"],"award-info":[{"award-number":["2022YFE0102500"]}]},{"name":"Shandong Province Key R&D Program","award":["2019JZZY020805"],"award-info":[{"award-number":["2019JZZY020805"]}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52061635102"],"award-info":[{"award-number":["52061635102"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Ind. Electron."],"published-print":{"date-parts":[[2023,9]]},"DOI":"10.1109\/tie.2022.3212405","type":"journal-article","created":{"date-parts":[[2022,10,12]],"date-time":"2022-10-12T19:38:46Z","timestamp":1665603526000},"page":"9495-9504","source":"Crossref","is-referenced-by-count":19,"title":["A Novel Model of the Aging Effect on the ON-State Resistance of SiC Power MOSFETs for High-Accuracy Package-Related Aging Evaluation"],"prefix":"10.1109","volume":"70","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8175-4266","authenticated-orcid":false,"given":"Qinghao","family":"Zhang","sequence":"first","affiliation":[{"name":"Tsinghua University, Beijing, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1288-956X","authenticated-orcid":false,"given":"Pinjia","family":"Zhang","sequence":"additional","affiliation":[{"name":"GE Global Research, Niskayuna, NY, USA"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2021.3072436"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2268900"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2416358"},{"issue":"1","key":"ref4","first-page":"221","article-title":"Application and challenge of SiC devices in photovoltaic inverter","volume":"37","author":"Zheng","year":"2017","journal-title":"Chin. J. Elect. Eng."},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2011.2124436"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.24295\/CPSSTPEA.2017.00011"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2019.2935985"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2014.2373390"},{"issue":"6","key":"ref9","first-page":"52","article-title":"Performance comparison of enhanced GAN MOSFET and SI MOSFET in single phase full bridge inverter","volume":"44","author":"Deng","year":"2017","journal-title":"High Power Converter Technol."},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2019.2891214"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2016.2603144"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2016.2518127"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2020.3047135"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2016.2595482"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2019.2928478"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TII.2017.2665668"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2487263"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2017.2753722"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2022.3163516"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/ICEMS.2019.8922346"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(02)00042-2"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2020.3047419"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1007\/978-0-387-47314-7"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2010.2067810"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1002\/9781118313534"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/TSM.2020.2983060"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2358260"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/IPEMC-ECCEAsia48364.2020.9367887"}],"container-title":["IEEE Transactions on Industrial Electronics"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/41\/10091710\/09917349.pdf?arnumber=9917349","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,1,22]],"date-time":"2024-01-22T22:49:01Z","timestamp":1705963741000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9917349\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,9]]},"references-count":28,"journal-issue":{"issue":"9"},"URL":"https:\/\/doi.org\/10.1109\/tie.2022.3212405","relation":{},"ISSN":["0278-0046","1557-9948"],"issn-type":[{"value":"0278-0046","type":"print"},{"value":"1557-9948","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,9]]}}}