{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,12]],"date-time":"2026-06-12T17:06:15Z","timestamp":1781283975991,"version":"3.54.1"},"reference-count":38,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"10","license":[{"start":{"date-parts":[[2024,10,1]],"date-time":"2024-10-01T00:00:00Z","timestamp":1727740800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2024,10,1]],"date-time":"2024-10-01T00:00:00Z","timestamp":1727740800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,10,1]],"date-time":"2024-10-01T00:00:00Z","timestamp":1727740800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"name":"National Key R&D Program of China","award":["2022YFB2405300"],"award-info":[{"award-number":["2022YFB2405300"]}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52207062"],"award-info":[{"award-number":["52207062"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52225702"],"award-info":[{"award-number":["52225702"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Ind. Electron."],"published-print":{"date-parts":[[2024,10]]},"DOI":"10.1109\/tie.2024.3349585","type":"journal-article","created":{"date-parts":[[2024,1,19]],"date-time":"2024-01-19T18:44:04Z","timestamp":1705689844000},"page":"13299-13309","source":"Crossref","is-referenced-by-count":10,"title":["An Online Junction Temperature Estimating Method for SiC MOSFETs Based on Steady-State Features and GPR"],"prefix":"10.1109","volume":"71","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8175-4266","authenticated-orcid":false,"given":"Qinghao","family":"Zhang","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering, Tsinghua University, Beijing, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0009-5328-2287","authenticated-orcid":false,"given":"Wenrui","family":"Li","sequence":"additional","affiliation":[{"name":"Department of Automation, Tsinghua University, Beijing, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1288-956X","authenticated-orcid":false,"given":"Pinjia","family":"Zhang","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, Tsinghua University, Beijing, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2362657"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TCPMT.2018.2860998"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2416358"},{"issue":"1","key":"ref4","first-page":"221","article-title":"Chances and challenges of photovoltaic inverters with silicon carbide devices","volume-title":"Proc. Chin. Soc. Elect. Eng.","volume":"37","author":"Zeng","year":"2017"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ICEMS.2019.8922346"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2864305"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2016.2621757"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2019.2928478"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2022.3212405"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2011.06.053"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ICPECA47973.2019.8975585"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2022.3225930"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2015.2391438"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.24295\/CPSSTPEA.2019.00009"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TCPMT.2019.2939617"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2018.2882402"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/ICEMS.2019.8922346"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2018.2812710"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.23919\/CJEE.2020.000014"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/ICBEST.2015.7435870"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2018.2879511"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2020.3009202"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2022.3186977"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2023.3235729"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2020.3022390"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/SSD.2016.7473664"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2019.2923457"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2021.3072436"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2015.2497202"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2018.2836362"},{"key":"ref31","first-page":"1","article-title":"Characterization of online junction temperature of the SiC power MOSFET by combination of four TSEPs using neural network","volume-title":"Proc. 24th Eur. Conf. Power Electron. Appl.","author":"Sharma"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2021.3130274"},{"key":"ref33","first-page":"1","article-title":"Comparative study of determining junction temperature of SiC MOSFETs during power cycling tests by a Tj sensor and the VSD(T)-method","volume-title":"Proc. IEEE 11th Int. Conf. Integr. Power Electron. Syst.","author":"Kempiak"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/EuroSimE52062.2021.9410839"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-319-70917-8_3"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2022.3204948"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.7551\/mitpress\/3206.001.0001"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1017\/CBO9780511804779"}],"container-title":["IEEE Transactions on Industrial Electronics"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/41\/10589496\/10409888.pdf?arnumber=10409888","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,7,11]],"date-time":"2024-07-11T05:06:12Z","timestamp":1720674372000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10409888\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,10]]},"references-count":38,"journal-issue":{"issue":"10"},"URL":"https:\/\/doi.org\/10.1109\/tie.2024.3349585","relation":{},"ISSN":["0278-0046","1557-9948"],"issn-type":[{"value":"0278-0046","type":"print"},{"value":"1557-9948","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,10]]}}}