{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,18]],"date-time":"2026-06-18T15:38:34Z","timestamp":1781797114783,"version":"3.54.5"},"reference-count":23,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2024,1,1]],"date-time":"2024-01-01T00:00:00Z","timestamp":1704067200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2024,1,1]],"date-time":"2024-01-01T00:00:00Z","timestamp":1704067200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,1,1]],"date-time":"2024-01-01T00:00:00Z","timestamp":1704067200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100005089","name":"Beijing Natural Science Foundation","doi-asserted-by":"publisher","award":["L234029"],"award-info":[{"award-number":["L234029"]}],"id":[{"id":"10.13039\/501100005089","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100005089","name":"Beijing Natural Science Foundation","doi-asserted-by":"publisher","award":["4232064"],"award-info":[{"award-number":["4232064"]}],"id":[{"id":"10.13039\/501100005089","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62334002"],"award-info":[{"award-number":["62334002"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Instrum. Meas."],"published-print":{"date-parts":[[2024]]},"DOI":"10.1109\/tim.2024.3457935","type":"journal-article","created":{"date-parts":[[2024,9,11]],"date-time":"2024-09-11T17:45:39Z","timestamp":1726076739000},"page":"1-9","source":"Crossref","is-referenced-by-count":7,"title":["Measurement of Thermal Resistance of SiC MOSFET Module Based on Conduction Voltage Drop"],"prefix":"10.1109","volume":"73","author":[{"ORCID":"https:\/\/orcid.org\/0009-0006-7210-1187","authenticated-orcid":false,"given":"Zhongyuan","family":"Chen","sequence":"first","affiliation":[{"name":"Beijing Institute of Smart Energy, Beijing, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0002-2882-8443","authenticated-orcid":false,"given":"Jiapeng","family":"Li","sequence":"additional","affiliation":[{"name":"Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-8055-5923","authenticated-orcid":false,"given":"Rui","family":"Jin","sequence":"additional","affiliation":[{"name":"Beijing Institute of Smart Energy, Beijing, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0003-5730-8807","authenticated-orcid":false,"given":"Meiting","family":"Cui","sequence":"additional","affiliation":[{"name":"Beijing Institute of Smart Energy, Beijing, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8100-0616","authenticated-orcid":false,"given":"Chunsheng","family":"Guo","sequence":"additional","affiliation":[{"name":"Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","volume-title":"Integrated Circuit Thermal Measurement Method-Electrical Test Method (Single Semiconductor Device)","year":"1995"},{"key":"ref2","volume-title":"Transient Dual Interface Test Method for the Measurement of the Thermal Resistance Junction to Case of Semiconductor Devices With Heat Flow Through a Single Path","year":"2010"},{"issue":"6","key":"ref3","first-page":"1759","article-title":"Measurement of thermal parameters of SiC MOSFET modules with cooling curves","volume":"40","author":"Shuai","year":"2020","journal-title":"Proc. CSEE"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/epepemc.2016.7752121"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/led.2018.2847906"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/tpel.2018.2879511"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/tie.2014.2349876"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.7567\/jjap.54.040103"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1002\/9781118313534.ch7"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2018.2812710"},{"issue":"12","key":"ref11","first-page":"2522","article-title":"Online junction temperature extraction for SiC module based on built-in temperature sensor","volume":"36","author":"Ping","year":"2021","journal-title":"Trans. China Electrotechnical Soc."},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2017.2739687"},{"key":"ref13","volume-title":"Study on Characteristics of Silicon Carbide MOSFET","author":"Furong","year":"2017"},{"key":"ref14","volume-title":"Research on Measurement Method of Junction Temperature of SiC MOSFET and On-Line Temperature Measurement Equipment of Power Cycle","author":"Guo","year":"2021"},{"issue":"4","key":"ref15","first-page":"313","article-title":"Study on threshold voltage drift evaluation method of SiC MOSFET","volume":"41","author":"Weili","year":"2021","journal-title":"Res. Prog. SSE"},{"key":"ref16","volume-title":"Guidelines for Measuring the Threshold Voltage of SiC MOSFETs","year":"2021"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2017.11.020"},{"key":"ref18","first-page":"16","article-title":"IGBT gate driver with accurate measurement of junction temperature and inverter output current","volume-title":"Proc. PCIM Europe","author":"Marco"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/IAS.1998.730245"},{"issue":"11","key":"ref20","first-page":"3904","article-title":"A review of junction temperature measurement methods of SiC MOSFET by temperature-sensitive electrical parameters","volume":"41","author":"Tao","year":"2021","journal-title":"Proc. CSEE"},{"issue":"12","key":"ref21","first-page":"988","article-title":"Research on the changing phenomenon of temperature calibration curve with current in junction temperature measurement by pulse current method","volume":"45","author":"Hao","year":"2020","journal-title":"Semicond. Test. Equip."},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2875077"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1007\/s10891-012-0723-9"}],"container-title":["IEEE Transactions on Instrumentation and Measurement"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/19\/10367905\/10678745.pdf?arnumber=10678745","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,10,10]],"date-time":"2024-10-10T14:27:44Z","timestamp":1728570464000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10678745\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024]]},"references-count":23,"URL":"https:\/\/doi.org\/10.1109\/tim.2024.3457935","relation":{},"ISSN":["0018-9456","1557-9662"],"issn-type":[{"value":"0018-9456","type":"print"},{"value":"1557-9662","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024]]}}}