{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,24]],"date-time":"2025-09-24T10:26:53Z","timestamp":1758709613576,"version":"3.37.3"},"reference-count":54,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2024,1,1]],"date-time":"2024-01-01T00:00:00Z","timestamp":1704067200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2024,1,1]],"date-time":"2024-01-01T00:00:00Z","timestamp":1704067200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,1,1]],"date-time":"2024-01-01T00:00:00Z","timestamp":1704067200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62104173"],"award-info":[{"award-number":["62104173"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Instrum. Meas."],"published-print":{"date-parts":[[2024]]},"DOI":"10.1109\/tim.2024.3485440","type":"journal-article","created":{"date-parts":[[2024,10,25]],"date-time":"2024-10-25T17:22:05Z","timestamp":1729876925000},"page":"1-9","source":"Crossref","is-referenced-by-count":1,"title":["High-Throughput Thermophysical Characterization of Semiconductors"],"prefix":"10.1109","volume":"73","author":[{"ORCID":"https:\/\/orcid.org\/0009-0001-4794-2666","authenticated-orcid":false,"given":"Shaojie","family":"Zhou","sequence":"first","affiliation":[{"name":"Institute of Technological Sciences, Wuhan University, Wuhan, China"}]},{"ORCID":"https:\/\/orcid.org\/0009-0008-7026-5705","authenticated-orcid":false,"given":"Yali","family":"Mao","sequence":"additional","affiliation":[{"name":"Institute of Technological Sciences, Wuhan University, Wuhan, China"}]},{"ORCID":"https:\/\/orcid.org\/0009-0007-0757-4970","authenticated-orcid":false,"given":"Yunliang","family":"Ma","sequence":"additional","affiliation":[{"name":"Institute of Technological Sciences, Wuhan University, Wuhan, China"}]},{"ORCID":"https:\/\/orcid.org\/0009-0008-9535-1976","authenticated-orcid":false,"given":"Guoliang","family":"Ma","sequence":"additional","affiliation":[{"name":"Institute of Technological Sciences, Wuhan University, Wuhan, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3116-6049","authenticated-orcid":false,"given":"Chao","family":"Yuan","sequence":"additional","affiliation":[{"name":"Institute of Technological Sciences, Wuhan University, Wuhan, China"}]}],"member":"263","reference":[{"doi-asserted-by":"publisher","key":"ref1","DOI":"10.1021\/acsnano.3c05485"},{"doi-asserted-by":"publisher","key":"ref2","DOI":"10.1021\/acsnano.0c09915"},{"doi-asserted-by":"publisher","key":"ref3","DOI":"10.1016\/j.mtphys.2021.100498"},{"doi-asserted-by":"publisher","key":"ref4","DOI":"10.1103\/PhysRevMaterials.2.064005"},{"doi-asserted-by":"publisher","key":"ref5","DOI":"10.1016\/j.mtphys.2017.12.005"},{"doi-asserted-by":"publisher","key":"ref6","DOI":"10.1021\/acsami.0c11672"},{"doi-asserted-by":"publisher","key":"ref7","DOI":"10.1021\/acsami.9b10106"},{"doi-asserted-by":"publisher","key":"ref8","DOI":"10.1063\/5.0122200"},{"doi-asserted-by":"publisher","key":"ref9","DOI":"10.1063\/1.3006335"},{"doi-asserted-by":"publisher","key":"ref10","DOI":"10.1063\/5.0098048"},{"doi-asserted-by":"publisher","key":"ref11","DOI":"10.1063\/5.0055593"},{"doi-asserted-by":"publisher","key":"ref12","DOI":"10.1021\/acsaelm.2c01163"},{"doi-asserted-by":"publisher","key":"ref13","DOI":"10.1103\/PhysRevMaterials.5.104604"},{"doi-asserted-by":"publisher","key":"ref14","DOI":"10.1063\/5.0018824"},{"doi-asserted-by":"publisher","key":"ref15","DOI":"10.1063\/1.1497704"},{"doi-asserted-by":"publisher","key":"ref16","DOI":"10.1063\/1.1427153"},{"doi-asserted-by":"publisher","key":"ref17","DOI":"10.1063\/1.5126970"},{"doi-asserted-by":"publisher","key":"ref18","DOI":"10.1063\/1.1661506"},{"doi-asserted-by":"publisher","key":"ref19","DOI":"10.1063\/1.5099961"},{"doi-asserted-by":"publisher","key":"ref20","DOI":"10.1063\/5.0164110"},{"doi-asserted-by":"publisher","key":"ref21","DOI":"10.1063\/1.3289907"},{"doi-asserted-by":"publisher","key":"ref22","DOI":"10.1063\/1.3592882"},{"doi-asserted-by":"publisher","key":"ref23","DOI":"10.1115\/1.4034605"},{"doi-asserted-by":"publisher","key":"ref24","DOI":"10.1021\/nl400531f"},{"doi-asserted-by":"publisher","key":"ref25","DOI":"10.1063\/1.4918800"},{"key":"ref26","first-page":"151","article-title":"Rapid characterization of GaN-on-diamond interfacial thermal resistance using contactless transient thermoreflectance","volume-title":"Proc. CS MANTECH Conf.","author":"Sun"},{"doi-asserted-by":"publisher","key":"ref27","DOI":"10.1109\/LED.2014.2350075"},{"doi-asserted-by":"publisher","key":"ref28","DOI":"10.1109\/iTherm54085.2022.9899513"},{"doi-asserted-by":"publisher","key":"ref29","DOI":"10.1063\/1.5040100"},{"doi-asserted-by":"publisher","key":"ref30","DOI":"10.1007\/s10462-007-9052-3"},{"doi-asserted-by":"publisher","key":"ref31","DOI":"10.1063\/5.0057796"},{"doi-asserted-by":"publisher","key":"ref32","DOI":"10.1080\/15567265.2020.1807662"},{"doi-asserted-by":"publisher","key":"ref33","DOI":"10.1063\/5.0192164"},{"doi-asserted-by":"publisher","key":"ref34","DOI":"10.1038\/323533a0"},{"doi-asserted-by":"publisher","key":"ref35","DOI":"10.1063\/1.3212673"},{"doi-asserted-by":"publisher","key":"ref36","DOI":"10.1007\/978-1-4614-1533-6_540"},{"doi-asserted-by":"publisher","key":"ref37","DOI":"10.1016\/j.tsf.2008.10.116"},{"doi-asserted-by":"publisher","key":"ref38","DOI":"10.1016\/0040-6031(86)85012-2"},{"doi-asserted-by":"publisher","key":"ref39","DOI":"10.1007\/978-0-387-85695-7"},{"doi-asserted-by":"publisher","key":"ref40","DOI":"10.6028\/jres.087.012"},{"doi-asserted-by":"publisher","key":"ref41","DOI":"10.1063\/1.4935987"},{"doi-asserted-by":"publisher","key":"ref42","DOI":"10.1063\/1.4941347"},{"doi-asserted-by":"publisher","key":"ref43","DOI":"10.1080\/15567265.2016.1154630"},{"doi-asserted-by":"publisher","key":"ref44","DOI":"10.1002\/smll.202309961"},{"doi-asserted-by":"publisher","key":"ref45","DOI":"10.1016\/j.diamond.2023.110717"},{"doi-asserted-by":"publisher","key":"ref46","DOI":"10.1103\/PhysRevB.76.165108"},{"doi-asserted-by":"publisher","key":"ref47","DOI":"10.1103\/PhysRevApplied.5.014009"},{"doi-asserted-by":"publisher","key":"ref48","DOI":"10.1063\/1.5079428"},{"doi-asserted-by":"publisher","key":"ref49","DOI":"10.1063\/5.0078155"},{"doi-asserted-by":"publisher","key":"ref50","DOI":"10.1016\/S0038-1098(03)00629-X"},{"doi-asserted-by":"publisher","key":"ref51","DOI":"10.1557\/JMR.2007.0441"},{"doi-asserted-by":"publisher","key":"ref52","DOI":"10.1063\/1.2335373"},{"doi-asserted-by":"publisher","key":"ref53","DOI":"10.1201\/b17118"},{"doi-asserted-by":"publisher","key":"ref54","DOI":"10.1103\/PhysRev.130.1743"}],"container-title":["IEEE Transactions on Instrumentation and Measurement"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/19\/10367905\/10735219.pdf?arnumber=10735219","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,11,27]],"date-time":"2024-11-27T15:18:09Z","timestamp":1732720689000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10735219\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024]]},"references-count":54,"URL":"https:\/\/doi.org\/10.1109\/tim.2024.3485440","relation":{},"ISSN":["0018-9456","1557-9662"],"issn-type":[{"type":"print","value":"0018-9456"},{"type":"electronic","value":"1557-9662"}],"subject":[],"published":{"date-parts":[[2024]]}}}