{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,27]],"date-time":"2025-11-27T19:05:11Z","timestamp":1764270311231,"version":"3.46.0"},"reference-count":27,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"name":"National Key Research and Development Program of China","award":["2023YFF0721402","2023YFB3611200"],"award-info":[{"award-number":["2023YFF0721402","2023YFB3611200"]}]},{"name":"Open Research Fund of State Key Laboratory of Materials for Integrated Circuits","award":["SKLJC-K2024-05"],"award-info":[{"award-number":["SKLJC-K2024-05"]}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62274180"],"award-info":[{"award-number":["62274180"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Instrum. Meas."],"published-print":{"date-parts":[[2025]]},"DOI":"10.1109\/tim.2025.3546384","type":"journal-article","created":{"date-parts":[[2025,2,27]],"date-time":"2025-02-27T13:47:08Z","timestamp":1740664028000},"page":"1-8","source":"Crossref","is-referenced-by-count":0,"title":["Radiation Dose Detector of\n                    <i>\u03b3<\/i>\n                    -Ray Based on Transient Nonequilibrium Body Potential Under Pseudo-MOSFET Configuration"],"prefix":"10.1109","volume":"74","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-6752-0818","authenticated-orcid":false,"given":"Tiexin","family":"Zhang","sequence":"first","affiliation":[{"name":"Key Laboratory of Science and Technology on Silicon Devices, Institute of of Microelectronics of Chinese Academy of Sciences, Beijing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6154-4971","authenticated-orcid":false,"given":"Fanyu","family":"Liu","sequence":"additional","affiliation":[{"name":"Key Laboratory of Science and Technology on Silicon Devices, Institute of of Microelectronics of Chinese Academy of Sciences, Beijing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5688-1447","authenticated-orcid":false,"given":"Lei","family":"Shu","sequence":"additional","affiliation":[{"name":"Key Laboratory of Science and Technology on Silicon Devices, Institute of of Microelectronics of Chinese Academy of Sciences, Beijing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3402-6236","authenticated-orcid":false,"given":"Siyuan","family":"Chen","sequence":"additional","affiliation":[{"name":"Key Laboratory of Science and Technology on Silicon Devices, Institute of of Microelectronics of Chinese Academy of Sciences, Beijing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8040-5491","authenticated-orcid":false,"given":"Yuchong","family":"Wang","sequence":"additional","affiliation":[{"name":"Key Laboratory of Science and Technology on Silicon Devices, Institute of of Microelectronics of Chinese Academy of Sciences, Beijing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0002-5592-9960","authenticated-orcid":false,"given":"Yuchen","family":"Wu","sequence":"additional","affiliation":[{"name":"Key Laboratory of Science and Technology on Silicon Devices, Institute of of Microelectronics of Chinese Academy of Sciences, Beijing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6339-4006","authenticated-orcid":false,"given":"Jing","family":"Wan","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Fudan University, Shanghai, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6800-234X","authenticated-orcid":false,"given":"Yong","family":"Xu","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9140-9415","authenticated-orcid":false,"given":"Shi","family":"Li","sequence":"additional","affiliation":[{"name":"National Institute of Metrology, Beijing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1127-6278","authenticated-orcid":false,"given":"Yuyang","family":"Ding","sequence":"additional","affiliation":[{"name":"China Institute of Atomic Energy, Beijing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4905-2744","authenticated-orcid":false,"given":"Bo","family":"Li","sequence":"additional","affiliation":[{"name":"Key Laboratory of Science and Technology on Silicon Devices, Institute of of Microelectronics of Chinese Academy of Sciences, Beijing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2087-0356","authenticated-orcid":false,"given":"Zhengsheng","family":"Han","sequence":"additional","affiliation":[{"name":"Key Laboratory of Science and Technology on Silicon Devices, Institute of of Microelectronics of Chinese Academy of Sciences, Beijing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2384-9037","authenticated-orcid":false,"given":"Tianchun","family":"Ye","sequence":"additional","affiliation":[{"name":"Key Laboratory of Science and Technology on Silicon Devices, Institute of of Microelectronics of Chinese Academy of Sciences, Beijing, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1007\/s13391-018-0033-2"},{"volume-title":"The Physics of Radiation Therapy","year":"2024","author":"Khan","key":"ref2"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/j.snb.2013.09.012"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/49\/44\/445309"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1088\/0031-9155\/59\/20\/R303"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.sna.2017.11.014"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.2298\/FUEE1604509P"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1016\/j.apradiso.2015.06.024"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1093\/rpd\/ncv006"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1093\/rpd\/nct026"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/j.nuclphysbps.2023.07.009"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2017.11.010"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/SMICND.2018.8539753"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/JSEN.2020.3008133"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1149\/MA2021-01591589mtgabs"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1149\/1.3117426"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/16.841236"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/17\/9\/031"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1049\/el:19880369"},{"volume-title":"Department of Defense Test Method Standard: Microcircuits","year":"2010","key":"ref20"},{"volume-title":"Sentaurus User Guide","year":"2013","key":"ref21"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2019.107721"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/23.45374"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2003.821380"},{"article-title":"Out-of-equilibrium body potential measurements on SOI substrates: Implementation and applications for biochemical detection","year":"2019","author":"Benea","key":"ref25"},{"volume-title":"Technical Data VT05 100nm Radfet","year":"2022","key":"ref26"},{"volume-title":"Technical Data VT06 100nm Radfet","year":"2022","key":"ref27"}],"container-title":["IEEE Transactions on Instrumentation and Measurement"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/19\/10764799\/10906638.pdf?arnumber=10906638","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,11,27]],"date-time":"2025-11-27T18:57:43Z","timestamp":1764269863000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10906638\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025]]},"references-count":27,"URL":"https:\/\/doi.org\/10.1109\/tim.2025.3546384","relation":{},"ISSN":["0018-9456","1557-9662"],"issn-type":[{"type":"print","value":"0018-9456"},{"type":"electronic","value":"1557-9662"}],"subject":[],"published":{"date-parts":[[2025]]}}}