{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,25]],"date-time":"2026-02-25T20:13:28Z","timestamp":1772050408040,"version":"3.50.1"},"reference-count":37,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Instrum. Meas."],"published-print":{"date-parts":[[2025]]},"DOI":"10.1109\/tim.2025.3579735","type":"journal-article","created":{"date-parts":[[2025,6,16]],"date-time":"2025-06-16T18:57:36Z","timestamp":1750100256000},"page":"1-11","source":"Crossref","is-referenced-by-count":3,"title":["Remaining Useful Life Prediction of SiC MOSFETs Using the Autoformer-RELM Model"],"prefix":"10.1109","volume":"74","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-8319-3527","authenticated-orcid":false,"given":"Wei","family":"Luo","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering, University of Shanghai for Science and Technology, Shanghai, China"}]},{"ORCID":"https:\/\/orcid.org\/0009-0009-0177-6031","authenticated-orcid":false,"given":"Yufan","family":"Liu","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, University of Shanghai for Science and Technology, Shanghai, China"}]},{"ORCID":"https:\/\/orcid.org\/0009-0009-0177-2989","authenticated-orcid":false,"given":"Yili","family":"Pan","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, University of Shanghai for Science and Technology, Shanghai, China"}]},{"ORCID":"https:\/\/orcid.org\/0009-0008-0547-245X","authenticated-orcid":false,"given":"Lin","family":"Bai","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, University of Shanghai for Science and Technology, Shanghai, China"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2023.3346369"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2023.3273351"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2023.3278270"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1049\/pel2.12524"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2023.3258344"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2023.3321744"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TIM.2021.3054429"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1049\/iet-pel.2019.0587"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IPEMC-ECCEAsia60879.2024.10567447"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/EuroSimE60745.2024.10491463"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1080\/09398368.2015.11835467"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2014.07.082"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2020.3047419"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2017.2766692"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2018.2860587"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2021.3110476"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2019.2936850"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TII.2017.2665668"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.2017.7931083"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.3390\/mi14040836"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2020.3037161"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/MPEL.2020.3047668"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2020.3024914"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2024.3427643"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/PHM61473.2024.00058"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2020.113902"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/HVDC62448.2024.10722948"},{"issue":"8","key":"ref28","first-page":"749","article-title":"Time series prediction of IGBT lifetime feature based on VMD-LSTM-SVR","volume":"49","author":"Cui","year":"2024","journal-title":"Semicond. Technol."},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/TIM.2023.3251391"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE50734.2022.9947640"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/TIM.2022.3167778"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/ICCBD56965.2022.10080041"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/TIM.2023.3309395"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/ICCV48922.2021.01205"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/LWC.2023.3243117"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2019.2894717"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2019.2962503"}],"container-title":["IEEE Transactions on Instrumentation and Measurement"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/19\/10764799\/11036829.pdf?arnumber=11036829","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,25]],"date-time":"2025-06-25T05:32:58Z","timestamp":1750829578000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/11036829\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025]]},"references-count":37,"URL":"https:\/\/doi.org\/10.1109\/tim.2025.3579735","relation":{},"ISSN":["0018-9456","1557-9662"],"issn-type":[{"value":"0018-9456","type":"print"},{"value":"1557-9662","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025]]}}}