{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,18]],"date-time":"2026-02-18T22:24:15Z","timestamp":1771453455816,"version":"3.50.1"},"reference-count":37,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"1","license":[{"start":{"date-parts":[[2016,3,1]],"date-time":"2016-03-01T00:00:00Z","timestamp":1456790400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2016,3,1]],"date-time":"2016-03-01T00:00:00Z","timestamp":1456790400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2016,3,1]],"date-time":"2016-03-01T00:00:00Z","timestamp":1456790400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Rel."],"published-print":{"date-parts":[[2016,3]]},"DOI":"10.1109\/tr.2015.2456183","type":"journal-article","created":{"date-parts":[[2015,8,4]],"date-time":"2015-08-04T14:28:05Z","timestamp":1438698485000},"page":"263-271","source":"Crossref","is-referenced-by-count":2,"title":["A Spatio-Temporal Defect Process Model for Competing Progressive Breakdown Modes of Ultra-Thin Gate Oxides"],"prefix":"10.1109","volume":"65","author":[{"given":"Seong-Joon","family":"Kim","sequence":"first","affiliation":[{"name":"H. Milton Stewart School of Industrial & Systems Engineering, Georgia Institute of Technology, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tao","family":"Yuan","sequence":"additional","affiliation":[{"name":"Department of Industrial and Systems Engineering, Ohio University, Athens, Ohio, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Suk Joo","family":"Bae","sequence":"additional","affiliation":[{"name":"Department of Industrial Engineering, Hanyang University, Seoul, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1063\/1.371590"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1007\/BF01386390"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/16.662800"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1038\/420378a"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/IIRW.2013.6804141"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/TR.2007.903232"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1080\/0740817X.2011.584958"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.1995.499353"},{"key":"ref10","doi-asserted-by":"crossref","first-page":"224","DOI":"10.1109\/TED.2005.861597","article-title":"Statistics of competing post-breakdown failure modes in ultrathin MOS devices","volume":"53","author":"su\ufffd\ufffd","year":"2006","journal-title":"IEEE Trans Electron Devices"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2002.805010"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2002.1175802"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/16.981212"},{"key":"ref14","first-page":"6.1.1","article-title":"Understanding soft and hard breakdown statistics, prevalence ratios and energy dissipation during breakdown runaway","author":"su\ufffd\ufffd","year":"2001","journal-title":"IEDM Tech Dig"},{"key":"ref15","doi-asserted-by":"crossref","first-page":"1185","DOI":"10.1016\/S0026-2714(03)00170-7","article-title":"Statistics of soft and hard breakdown in thin SiO2 gate oxides","volume":"43","author":"su\ufffd\ufffd","year":"2003","journal-title":"Microelectron Rel"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2002.1175801"},{"key":"ref17","doi-asserted-by":"crossref","first-page":"272","DOI":"10.1109\/LED.2003.812139","article-title":"Statistics of successive breakdown events in gate oxides","volume":"24","author":"su\ufffd\ufffd","year":"2003","journal-title":"IEEE Electron Device Lett"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2004.835986"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2003.08.005"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/SISPAD.1999.799275"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IRWS.2002.1194223"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/ESREF.1996.888180"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2002.996609"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2003.1197781"},{"key":"ref29","doi-asserted-by":"crossref","DOI":"10.1002\/9781119115151","author":"cressie","year":"1993","journal-title":"Statistics for Spatial Data"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2003.1197713"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/7298.946459"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2000.843884"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"500","DOI":"10.1109\/16.987122","article-title":"impact of mosfet gate oxide breakdown on digital circuit operation and reliability","volume":"49","author":"kaczer","year":"2002","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2003.1269428"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2002.1003712"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2001178"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/15\/5\/301"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.1998.746316"},{"key":"ref24","first-page":"379","author":"crow","year":"1974","journal-title":"Reliability and Biometry"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2114349"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4899-4541-9"},{"key":"ref25","author":"rigdon","year":"2000","journal-title":"Statistical Methods for the Reliability of Repairable Systems"}],"container-title":["IEEE Transactions on Reliability"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/24\/7422884\/07177125.pdf?arnumber=7177125","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,2,18]],"date-time":"2026-02-18T21:16:30Z","timestamp":1771449390000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/7177125\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,3]]},"references-count":37,"journal-issue":{"issue":"1"},"URL":"https:\/\/doi.org\/10.1109\/tr.2015.2456183","relation":{},"ISSN":["0018-9529","1558-1721"],"issn-type":[{"value":"0018-9529","type":"print"},{"value":"1558-1721","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,3]]}}}