{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,10]],"date-time":"2026-05-10T03:27:57Z","timestamp":1778383677565,"version":"3.51.4"},"reference-count":25,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"12","license":[{"start":{"date-parts":[[2010,12,1]],"date-time":"2010-12-01T00:00:00Z","timestamp":1291161600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. VLSI Syst."],"published-print":{"date-parts":[[2010,12]]},"DOI":"10.1109\/tvlsi.2009.2032192","type":"journal-article","created":{"date-parts":[[2009,11,17]],"date-time":"2009-11-17T18:44:42Z","timestamp":1258483482000},"page":"1724-1734","source":"Crossref","is-referenced-by-count":74,"title":["Design Margin Exploration of Spin-Transfer Torque RAM (STT-RAM) in Scaled Technologies"],"prefix":"10.1109","volume":"18","author":[{"given":"Yiran","family":"Chen","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaobin","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hai","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Haiwen","family":"Xi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuan","family":"Yan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wenzhong","family":"Zhu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1063\/1.2837800"},{"key":"ref11","author":"rabaey","year":"1996","journal-title":"Digital Integrated Circuits A Design Perspective"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1145\/1629911.1629936"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1063\/1.1702682"},{"key":"ref14","doi-asserted-by":"crossref","first-page":"1l","DOI":"10.1016\/0304-8853(96)00062-5","article-title":"current driven excitation of magnetic multilayers","volume":"159","author":"slonczeski","year":"1996","journal-title":"J Magn Magn Mater"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.54.9353"},{"key":"ref16","author":"razavi","year":"2001","journal-title":"Design of Analog CMOS Integrated Circuits"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.92.088302"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1126\/science.1105722"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2009.2015376"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2005.1609379"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2004.1345371"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ASSCC.2006.357911"},{"key":"ref5","first-page":"480","article-title":"2 mb spin-transfer torque ram (spram) with bit-by-bit bidirectional current write and parallelizing-direction current read","author":"kawahara","year":"2007","journal-title":"Proc IEEE Int Solid-State Circuits Conf"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.62.570"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/BMAS.2006.283467"},{"key":"ref2","first-page":"22","article-title":"a study for <formula formulatype=\"inline\"><tex notation=\"tex\">$0.18\\mu{\\rm m}$<\/tex><\/formula> high-density mram","author":"motoyoshi","year":"2004","journal-title":"IEEE Symp VLSI Tech"},{"key":"ref1","year":"2007","journal-title":"International Technology Roadmap for Semiconductors"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1016\/j.jmmm.2004.11.512"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2009.2015376"},{"key":"ref22","year":"0","journal-title":"Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.884077"},{"key":"ref24","first-page":"69","article-title":"energy barrier and effective thermal volume in columnar grains","volume":"267 1","author":"foster","year":"2003","journal-title":"J Appl Phys"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1038\/nature01967"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1063\/1.372720"}],"container-title":["IEEE Transactions on Very Large Scale Integration (VLSI) Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/92\/5634429\/05325662.pdf?arnumber=5325662","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,10,10]],"date-time":"2021-10-10T23:58:46Z","timestamp":1633910326000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/5325662\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,12]]},"references-count":25,"journal-issue":{"issue":"12"},"URL":"https:\/\/doi.org\/10.1109\/tvlsi.2009.2032192","relation":{},"ISSN":["1063-8210"],"issn-type":[{"value":"1063-8210","type":"print"}],"subject":[],"published":{"date-parts":[[2010,12]]}}}