{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,7,2]],"date-time":"2024-07-02T21:53:32Z","timestamp":1719957212419},"reference-count":17,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"7","license":[{"start":{"date-parts":[[2014,7,1]],"date-time":"2014-07-01T00:00:00Z","timestamp":1404172800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. VLSI Syst."],"published-print":{"date-parts":[[2014,7]]},"DOI":"10.1109\/tvlsi.2013.2294095","type":"journal-article","created":{"date-parts":[[2014,1,31]],"date-time":"2014-01-31T17:51:40Z","timestamp":1391190700000},"page":"1620-1624","source":"Crossref","is-referenced-by-count":32,"title":["An Offset-Canceling Triple-Stage Sensing Circuit for Deep Submicrometer STT-RAM"],"prefix":"10.1109","volume":"22","author":[{"given":"Taehui","family":"Na","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jisu","family":"Kim","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jung Pill","family":"Kim","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Seung H.","family":"Kang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Seong-Ook","family":"Jung","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","article-title":"Toggle and spin torque: MRAM at Everspin Technologies","author":"rizzo","year":"0","journal-title":"Proc Non-Volatile Memories Workshop"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/16.711362"},{"key":"ref12","doi-asserted-by":"crossref","first-page":"907","DOI":"10.1109\/TCSII.2008.923411","article-title":"Numerical estimation of yield in sub-100-nm SRAM design using Monte Carlo simulation","volume":"55","author":"nho","year":"2008","journal-title":"IEEE Trans Circuit Syst II Exp Briefs"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2013.2239320"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2010.2041476"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424382"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2010.5488324"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2804"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2011.5873205"},{"key":"ref3","first-page":"279","article-title":"45 nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T\/1MTJ cell","author":"lin","year":"0","journal-title":"Proc IEEE IEDM"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2010.2088143"},{"key":"ref5","first-page":"296","article-title":"A 45 nm 1 Mb embedded STT-MRAM with design techniques to minimize read-disturbance","author":"kim","year":"0","journal-title":"Proc IEEE Symp VLSI Circuits"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2013.2252653"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2012.6187506"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2007.909751"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2005.1609379"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2011.2170778"}],"container-title":["IEEE Transactions on Very Large Scale Integration (VLSI) Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/92\/6841655\/06701219.pdf?arnumber=6701219","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T16:17:31Z","timestamp":1642004251000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/6701219"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2014,7]]},"references-count":17,"journal-issue":{"issue":"7"},"URL":"https:\/\/doi.org\/10.1109\/tvlsi.2013.2294095","relation":{},"ISSN":["1063-8210","1557-9999"],"issn-type":[{"value":"1063-8210","type":"print"},{"value":"1557-9999","type":"electronic"}],"subject":[],"published":{"date-parts":[[2014,7]]}}}