{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,27]],"date-time":"2025-10-27T10:44:22Z","timestamp":1761561862018},"reference-count":14,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"3","license":[{"start":{"date-parts":[[2015,3,1]],"date-time":"2015-03-01T00:00:00Z","timestamp":1425168000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. VLSI Syst."],"published-print":{"date-parts":[[2015,3]]},"DOI":"10.1109\/tvlsi.2014.2313815","type":"journal-article","created":{"date-parts":[[2014,4,18]],"date-time":"2014-04-18T23:00:20Z","timestamp":1397862020000},"page":"534-543","source":"Crossref","is-referenced-by-count":7,"title":["Super Fast Physics-Based Methodology for Accurate Memory Yield Prediction"],"prefix":"10.1109","volume":"23","author":[{"given":"Rajiv V.","family":"Joshi","sequence":"first","affiliation":[]},{"given":"Keunwoo","family":"Kim","sequence":"additional","affiliation":[]},{"given":"Rouwaida","family":"Kanj","sequence":"additional","affiliation":[]},{"given":"Ajay N.","family":"Bhoj","sequence":"additional","affiliation":[]},{"given":"Matthew M.","family":"Ziegler","sequence":"additional","affiliation":[]},{"given":"Phil","family":"Oldiges","sequence":"additional","affiliation":[]},{"given":"Pranita","family":"Kerber","sequence":"additional","affiliation":[]},{"given":"Robert","family":"Wong","sequence":"additional","affiliation":[]},{"given":"Terence","family":"Hook","sequence":"additional","affiliation":[]},{"given":"Sudesh","family":"Saroop","sequence":"additional","affiliation":[]},{"given":"Carl","family":"Radens","sequence":"additional","affiliation":[]},{"given":"Chun-Chen","family":"Yeh","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","first-page":"34.7.1","article-title":"Hardware-assisted 3D TCAD for predictive capacitance extraction in 32 nm SOI SRAMs","author":"bhoj","year":"2011","journal-title":"Proc IEEE Int Electron Device Meeting"},{"key":"ref11","first-page":"230","article-title":"A 4.6 GHz 162 Mb SRAM design in 22 nm tri-gate CMOS technology with integrated active VMIN-enhancing assist circuitry","author":"karl","year":"2012","journal-title":"Proc IEEE Int Solid State Circuits Conf"},{"key":"ref12","year":"2014","journal-title":"An Advanced 1D 2D and 3D Process Simulator"},{"key":"ref13","first-page":"315","article-title":"Statistical exploration of the dual supply voltage space of a 65 nm PD\/SOI CMOS SRAM cell","author":"joshi","year":"2006","journal-title":"Proc IEEE Eur Solid-State Device Research Conf"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1987.1052809"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.1983.1270035"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1145\/2024724.2024769"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/VTSA.2005.1497065"},{"key":"ref5","year":"2013","journal-title":"MEDICI 2-D Device Simulation"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.891252"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1147\/rd.441.0142"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1145\/1146909.1146930"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/DATE.2007.364490"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/16.902730"}],"container-title":["IEEE Transactions on Very Large Scale Integration (VLSI) Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/92\/7046457\/06802410.pdf?arnumber=6802410","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T16:41:01Z","timestamp":1642005661000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/6802410"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,3]]},"references-count":14,"journal-issue":{"issue":"3"},"URL":"https:\/\/doi.org\/10.1109\/tvlsi.2014.2313815","relation":{},"ISSN":["1063-8210","1557-9999"],"issn-type":[{"value":"1063-8210","type":"print"},{"value":"1557-9999","type":"electronic"}],"subject":[],"published":{"date-parts":[[2015,3]]}}}