{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,26]],"date-time":"2026-02-26T00:18:06Z","timestamp":1772065086717,"version":"3.50.1"},"reference-count":62,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"8","license":[{"start":{"date-parts":[[2016,8,1]],"date-time":"2016-08-01T00:00:00Z","timestamp":1470009600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"funder":[{"DOI":"10.13039\/100000185","name":"Defense Advanced Research Projects Agency","doi-asserted-by":"publisher","award":["HR0011-11-1-0011"],"award-info":[{"award-number":["HR0011-11-1-0011"]}],"id":[{"id":"10.13039\/100000185","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","award":["116786"],"award-info":[{"award-number":["116786"]}],"id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. VLSI Syst."],"published-print":{"date-parts":[[2016,8]]},"DOI":"10.1109\/tvlsi.2016.2520658","type":"journal-article","created":{"date-parts":[[2016,2,25]],"date-time":"2016-02-25T15:09:16Z","timestamp":1456412956000},"page":"2712-2725","source":"Crossref","is-referenced-by-count":21,"title":["System-Level Modeling of Microprocessor Reliability Degradation Due to Bias Temperature Instability and Hot Carrier Injection"],"prefix":"10.1109","volume":"24","author":[{"given":"Chang-Chih","family":"Chen","sequence":"first","affiliation":[]},{"given":"Taizhi","family":"Liu","sequence":"additional","affiliation":[]},{"given":"Linda","family":"Milor","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref39","first-page":"7","article-title":"A unified FinFET reliability model including high $K$ gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability","author":"ma","year":"2009","journal-title":"Proc Int Symp Quality Electron Design"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2015.06.078"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2006.346777"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2157828"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2015.7112711"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2014.6861125"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2015.06.008"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2007.910130"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.47.1527"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2006.1705198"},{"key":"ref60","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1987.1052809"},{"key":"ref62","doi-asserted-by":"publisher","DOI":"10.1145\/1146909.1146930"},{"key":"ref61","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2012.6187471"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/IWASI.2013.6576097"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/ICCD.2012.6378651"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2013.06.003"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2012.6241878"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.7873\/DATE.2013.328"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1049\/iet-cdt.2014.0142"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2014.2298333"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/ETS.2015.7138775"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/ASPDAC.2015.7059010"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/FPL.2013.6645497"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2011.5784455"},{"key":"ref25","year":"2016","journal-title":"MiBench benchmark"},{"key":"ref50","author":"box","year":"2005","journal-title":"Statistics for Experimenters"},{"key":"ref51","author":"jekabsons","year":"2011","journal-title":"ARESLab Adaptive Regression Splines Toolbox for MATLAB"},{"key":"ref59","doi-asserted-by":"publisher","DOI":"10.1109\/MSP.2004.1311137"},{"key":"ref58","doi-asserted-by":"publisher","DOI":"10.1109\/ASAP.2002.1030716"},{"key":"ref57","author":"jackson","year":"1978","journal-title":"A User Guide to Principal Components"},{"key":"ref56","year":"2016","journal-title":"ISCAS-85 and ISCAS-89 Benchmarks"},{"key":"ref55","year":"2016","journal-title":"PrimeTime Timing Modeling Tool"},{"key":"ref54","year":"2016","journal-title":"IWLS 2005 Benchmarks"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1147\/rd.102.0135"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1109\/GLSV.1999.757377"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/ASPDAC.2013.6509663"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2013.6523590"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1049\/el.2009.0678"},{"key":"ref12","first-page":"726","article-title":"NBTI induced performance degradation in logic and memory circuits: How effectively can we approach a reliability solution?","author":"kang","year":"2008","journal-title":"Proc Asia-South Pacific Design Autom Conf"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2012.6241795"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2013.2237910"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2013.2296499"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2006.251228"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2006.73"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2008.4558900"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/ASPDAC.2012.6164957"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2012.07.002"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2013.2277856"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.micpro.2015.10.002"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2014.01.008"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2012.2235441"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2008.2008810"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2015.7085438"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2009.5280814"},{"key":"ref46","year":"2004","journal-title":"Hotspot Temperature Modeling Tool"},{"key":"ref45","first-page":"33.8.1","article-title":"A 90 nm CMOS integrated nano-photonics technology for 25 Gbps WDM optical communications applications","author":"assefa","year":"2012","journal-title":"Proc IEEE Int Electron Devices Meeting (IEDM)"},{"key":"ref48","author":"celik","year":"2002","journal-title":"IC Interconnect Analysis"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1214\/aos\/1176347963"},{"key":"ref42","year":"2006","journal-title":"PrimeTime Power Modeling Tool"},{"key":"ref41","year":"2016","journal-title":"Xilinx ISE"},{"key":"ref44","year":"2016","journal-title":"Cadence SoC Encounter"},{"key":"ref43","year":"2016","journal-title":"Leon3 Processor"}],"container-title":["IEEE Transactions on Very Large Scale Integration (VLSI) Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/92\/7519042\/07419920.pdf?arnumber=7419920","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T11:43:31Z","timestamp":1641987811000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7419920\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,8]]},"references-count":62,"journal-issue":{"issue":"8"},"URL":"https:\/\/doi.org\/10.1109\/tvlsi.2016.2520658","relation":{},"ISSN":["1063-8210","1557-9999"],"issn-type":[{"value":"1063-8210","type":"print"},{"value":"1557-9999","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,8]]}}}