{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,8]],"date-time":"2026-02-08T05:36:30Z","timestamp":1770528990690,"version":"3.49.0"},"reference-count":14,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"10","license":[{"start":{"date-parts":[[2018,10,1]],"date-time":"2018-10-01T00:00:00Z","timestamp":1538352000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2018,10,1]],"date-time":"2018-10-01T00:00:00Z","timestamp":1538352000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2018,10,1]],"date-time":"2018-10-01T00:00:00Z","timestamp":1538352000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61604067"],"award-info":[{"award-number":["61604067"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Shenzhen Science and Technology Institute","award":["JCYJ20160429191518358"],"award-info":[{"award-number":["JCYJ20160429191518358"]}]},{"name":"Shenzhen Science and Technology Institute","award":["JCYJ20160530191008447"],"award-info":[{"award-number":["JCYJ20160530191008447"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. VLSI Syst."],"published-print":{"date-parts":[[2018,10]]},"DOI":"10.1109\/tvlsi.2018.2836331","type":"journal-article","created":{"date-parts":[[2018,5,31]],"date-time":"2018-05-31T18:56:06Z","timestamp":1527792966000},"page":"2190-2194","source":"Crossref","is-referenced-by-count":55,"title":["A 0.9-V 33.7-ppm\/\u00b0C 85-nW Sub-Bandgap Voltage Reference Consisting of Subthreshold MOSFETs and Single BJT"],"prefix":"10.1109","volume":"26","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-3660-1524","authenticated-orcid":false,"given":"Lidan","family":"Wang","sequence":"first","affiliation":[{"name":"Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4878-4655","authenticated-orcid":false,"given":"Chenchang","family":"Zhan","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China"}]},{"given":"Junyao","family":"Tang","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2252-3665","authenticated-orcid":false,"given":"Yang","family":"Liu","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China"}]},{"given":"Guofeng","family":"Li","sequence":"additional","affiliation":[{"name":"College of Electronic Information and Optical Engineering, Nankai University, Tianjin, China"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2010.2092997"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2014.2340576"},{"key":"ref12","author":"razavi","year":"2001","journal-title":"Design of Analog CMOS Integrated Circuits"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/4.760378"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2017.08.011"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2015.7062942"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2017.2754442"},{"key":"ref6","first-page":"144","article-title":"A 0.8 V, 37 nW, 42 ppm\/°C sub-bandgap voltage reference with PSRR of ?81 dB and line sensitivity of 51 ppm\/V in \n$0.18~\\mu \\text{m}$\n CMOS","author":"kim","year":"2017","journal-title":"Proc Symp VLSI Circuits"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2017.2711923"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2012.2206683"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2252523"},{"key":"ref2","first-page":"100","article-title":"A 9.3 nW all-in-one bandgap voltage and current reference circuit","author":"ji","year":"2017","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref1","first-page":"1","article-title":"A 29 nW bandgap reference circuit","author":"lee","year":"2015","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2021922"}],"container-title":["IEEE Transactions on Very Large Scale Integration (VLSI) Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/92\/8472222\/08370242.pdf?arnumber=8370242","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,5,29]],"date-time":"2024-05-29T17:37:18Z","timestamp":1717004238000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8370242\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,10]]},"references-count":14,"journal-issue":{"issue":"10"},"URL":"https:\/\/doi.org\/10.1109\/tvlsi.2018.2836331","relation":{},"ISSN":["1063-8210","1557-9999"],"issn-type":[{"value":"1063-8210","type":"print"},{"value":"1557-9999","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,10]]}}}