{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,10]],"date-time":"2026-07-10T20:32:12Z","timestamp":1783715532041,"version":"3.55.0"},"reference-count":36,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"11","license":[{"start":{"date-parts":[[2018,11,1]],"date-time":"2018-11-01T00:00:00Z","timestamp":1541030400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2018,11,1]],"date-time":"2018-11-01T00:00:00Z","timestamp":1541030400000},"content-version":"am","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2018,11,1]],"date-time":"2018-11-01T00:00:00Z","timestamp":1541030400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2018,11,1]],"date-time":"2018-11-01T00:00:00Z","timestamp":1541030400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100008873","name":"Catalyst Foundation","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100008873","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","award":["1453142"],"award-info":[{"award-number":["1453142"]}],"id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. VLSI Syst."],"published-print":{"date-parts":[[2018,11]]},"DOI":"10.1109\/tvlsi.2018.2856528","type":"journal-article","created":{"date-parts":[[2018,7,31]],"date-time":"2018-07-31T21:36:36Z","timestamp":1533072996000},"page":"2241-2253","source":"Crossref","is-referenced-by-count":7,"title":["<inline-formula> \n                     <tex-math notation=\"LaTeX\">$In~Situ$ <\/tex-math>\n                  <\/inline-formula> and In-Field Technique for Monitoring and Decelerating NBTI in 6T-SRAM Register Files"],"prefix":"10.1109","volume":"26","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-9277-143X","authenticated-orcid":false,"given":"Teng","family":"Yang","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5976-457X","authenticated-orcid":false,"given":"Doyun","family":"Kim","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5859-5877","authenticated-orcid":false,"given":"Jiangyi","family":"Li","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5707-6394","authenticated-orcid":false,"given":"Peter R.","family":"Kinget","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9722-0979","authenticated-orcid":false,"given":"Mingoo","family":"Seok","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/ESSCIRC.2016.7598335"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/ICCAD.2014.7001394"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2017.2717790"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2015.7063027"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/ASPDAC.2015.7059010"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/DATE.2011.5763152"},{"key":"ref34","first-page":"ca.5.1","article-title":"Impact of time-zero and NBTI variability on sub-20 nm FinFET based SRAM at low voltages","author":"goel","year":"2015","journal-title":"Proc IEEE Int Rel Phys Symp"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2008.2005814"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/CODES-ISSS.2013.6659017"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2008.917506"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2032698"},{"key":"ref14","first-page":"354","article-title":"SRAM stability characterization using tunable ring oscillators in 45 nm CMOS","author":"tsai","year":"2010","journal-title":"Proc IEEE Int Solid-State Circuits Conf (ISSCC)"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/VTS.2010.5469614"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2275653"},{"key":"ref17","first-page":"35","article-title":"Dynamic SRAM stability characterization in 45 nm CMOS","author":"toh","year":"2010","journal-title":"Proc Symp VLSI Circuits"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2004.842846"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2012.6241847"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1145\/1840845.1840916"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2007.910130"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2013.6523591"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1147\/rd.504.0433"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2007.369932"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2010.5617631"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2002.996644"},{"key":"ref8","first-page":"346","article-title":"A 32 nm high-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation","author":"kolar","year":"2010","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref7","first-page":"51","article-title":"A 65 nm test structure for the analysis of NBTI induced statistical variation in SRAM transistors","author":"fischer","year":"2008","journal-title":"Proc 35th Eur Solid-State Device Res Conf (ESSDERC)"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2005.852523"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2010.2085970"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2008.915629"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2012.2206683"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.902883"},{"key":"ref21","article-title":"BSIM4 model","year":"2013"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2003.1269294"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2004.1315337"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2006.73"},{"key":"ref25","first-page":"448","article-title":"Analysis of NBTI degradation- and recovery-behavior based on ultra fast VT-measurements","author":"reisinger","year":"2006","journal-title":"Proc IEEE Int Rel Phys Symp"}],"container-title":["IEEE Transactions on Very Large Scale Integration (VLSI) Systems"],"original-title":[],"link":[{"URL":"https:\/\/ieeexplore.ieee.org\/ielaam\/92\/8502886\/8423429-aam.pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/92\/8502886\/08423429.pdf?arnumber=8423429","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,4,8]],"date-time":"2022-04-08T18:48:32Z","timestamp":1649443712000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8423429\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,11]]},"references-count":36,"journal-issue":{"issue":"11"},"URL":"https:\/\/doi.org\/10.1109\/tvlsi.2018.2856528","relation":{},"ISSN":["1063-8210","1557-9999"],"issn-type":[{"value":"1063-8210","type":"print"},{"value":"1557-9999","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,11]]}}}