{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,22]],"date-time":"2025-12-22T05:23:50Z","timestamp":1766381030213,"version":"3.37.3"},"reference-count":46,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"3","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. VLSI Syst."],"published-print":{"date-parts":[[2019,3]]},"DOI":"10.1109\/tvlsi.2018.2878841","type":"journal-article","created":{"date-parts":[[2018,12,4]],"date-time":"2018-12-04T00:09:35Z","timestamp":1543882175000},"page":"601-610","source":"Crossref","is-referenced-by-count":23,"title":["Understanding the Impact of Time-Dependent Random Variability on Analog ICs: From Single Transistor Measurements to Circuit Simulations"],"prefix":"10.1109","volume":"27","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-3623-1842","authenticated-orcid":false,"given":"Marko","family":"Simicic","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Pieter","family":"Weckx","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0769-7069","authenticated-orcid":false,"given":"Bertrand","family":"Parvais","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0402-8225","authenticated-orcid":false,"given":"Philippe","family":"Roussel","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ben","family":"Kaczer","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Georges","family":"Gielen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2015.2404293"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936356"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2007.369904"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2005.1493117"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2004.1315337"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.51.4218"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4614-7909-3_17"},{"key":"ref36","first-page":"152","article-title":"From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation","author":"toledano-luque","year":"2011","journal-title":"Symp VLSI Technol Dig Tech Papers"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2005.02.001"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424236"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1986.1052648"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2015.7338379"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.1998.746503"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2011.5784500"},{"key":"ref13","doi-asserted-by":"crossref","first-page":"1725","DOI":"10.1109\/TED.2014.2368191","article-title":"Impacts of random telegraph noise (RTN) on digital circuits","volume":"62","author":"luo","year":"2015","journal-title":"IEEE Trans Electron Devices"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2008.2002351"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2296358"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2015.7169180"},{"key":"ref17","first-page":"41","article-title":"Stress-induced MOSFET mismatch for analog circuits","author":"chen","year":"2001","journal-title":"Proc IEEE Int Integr Rel Workshop"},{"key":"ref18","first-page":"161","article-title":"Impact analysis of stochastic transistor aging on current-steering DACs in 32 nm CMOS","author":"bussche","year":"2011","journal-title":"Proc IEEE Int Conf Electron Circuits and Syst"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2012.6330571"},{"key":"ref28","doi-asserted-by":"crossref","first-page":"161","DOI":"10.1007\/978-1-4614-7909-3_7","article-title":"Statistical distribution of defect parameters","author":"kaczer","year":"2014","journal-title":"Bias Temperature Instability for Devices and Circuits"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4614-7909-3"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2016.7574652"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ESSCIRC.2011.6044952"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.1995.499353"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1063\/1.323909"},{"journal-title":"Hot Carrier Degradation in Semiconductor Devices","year":"2014","author":"grasser","key":"ref5"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2012.06.007"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2002.805612"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(00)00189-X"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936289"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.815862"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2014.2309086"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2004.03.017"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1109\/ASSCC.2008.4708780"},{"key":"ref22","first-page":"26","article-title":"Origin of NBTI variability in deeply scaled pFETs","author":"kaczer","year":"2010","journal-title":"Proc IEEE Int Rel Phys Symp"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2007.910437"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2253541"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2014.6861101"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1109\/IIRW.2016.7904892"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2044014"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2016.07.010"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/IIRW.2015.7437071"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2015.7112702"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936423"}],"container-title":["IEEE Transactions on Very Large Scale Integration (VLSI) Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/92\/8649697\/08556027.pdf?arnumber=8556027","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,13]],"date-time":"2022-07-13T21:10:23Z","timestamp":1657746623000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8556027\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,3]]},"references-count":46,"journal-issue":{"issue":"3"},"URL":"https:\/\/doi.org\/10.1109\/tvlsi.2018.2878841","relation":{},"ISSN":["1063-8210","1557-9999"],"issn-type":[{"type":"print","value":"1063-8210"},{"type":"electronic","value":"1557-9999"}],"subject":[],"published":{"date-parts":[[2019,3]]}}}