{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,24]],"date-time":"2026-01-24T13:55:07Z","timestamp":1769262907083,"version":"3.49.0"},"reference-count":19,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"2","license":[{"start":{"date-parts":[[2026,2,1]],"date-time":"2026-02-01T00:00:00Z","timestamp":1769904000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2026,2,1]],"date-time":"2026-02-01T00:00:00Z","timestamp":1769904000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,2,1]],"date-time":"2026-02-01T00:00:00Z","timestamp":1769904000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. VLSI Syst."],"published-print":{"date-parts":[[2026,2]]},"DOI":"10.1109\/tvlsi.2025.3624842","type":"journal-article","created":{"date-parts":[[2025,11,4]],"date-time":"2025-11-04T18:38:51Z","timestamp":1762281531000},"page":"672-676","source":"Crossref","is-referenced-by-count":0,"title":["A 0.31-V 16-Kb 9T SRAM With Enhanced Sensing Margin and Read Performance for Low-Power Applications"],"prefix":"10.1109","volume":"34","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-7603-1079","authenticated-orcid":false,"given":"Pengyuan","family":"Zhao","sequence":"first","affiliation":[{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-1688-6373","authenticated-orcid":false,"given":"Huidong","family":"Zhao","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China"}]},{"given":"Linnan","family":"Li","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China"}]},{"ORCID":"https:\/\/orcid.org\/0009-0000-5529-1421","authenticated-orcid":false,"given":"Zhi","family":"Li","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China"}]},{"ORCID":"https:\/\/orcid.org\/0009-0001-0746-9376","authenticated-orcid":false,"given":"Minglong","family":"Jia","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-1594-8800","authenticated-orcid":false,"given":"Xiang","family":"Li","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9102-2111","authenticated-orcid":false,"given":"Shushan","family":"Qiao","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2018.2883725"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2019.2956232"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/.2005.1469239"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2018.2876785"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2021.3102675"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2024.3367233"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2021.3138849"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2023.3247807"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2022.3230984"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/cicc57935.2023.10121235"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2014.2332267"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2016.2623601"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/vlsicircuits18222.2020.9162772"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2023.3327491"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2019.8780199"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/LSSC.2022.3151216"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2018.2792428"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2016.2607219"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2022.3166944"}],"container-title":["IEEE Transactions on Very Large Scale Integration (VLSI) Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/92\/11361320\/11224799.pdf?arnumber=11224799","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,1,23]],"date-time":"2026-01-23T21:02:21Z","timestamp":1769202141000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/11224799\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,2]]},"references-count":19,"journal-issue":{"issue":"2"},"URL":"https:\/\/doi.org\/10.1109\/tvlsi.2025.3624842","relation":{},"ISSN":["1063-8210","1557-9999"],"issn-type":[{"value":"1063-8210","type":"print"},{"value":"1557-9999","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,2]]}}}