{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,31]],"date-time":"2025-07-31T00:46:01Z","timestamp":1753922761150},"reference-count":30,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,10,26]],"date-time":"2022-10-26T00:00:00Z","timestamp":1666742400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,10,26]],"date-time":"2022-10-26T00:00:00Z","timestamp":1666742400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,10,26]]},"DOI":"10.1109\/uemcon54665.2022.9965669","type":"proceedings-article","created":{"date-parts":[[2022,12,1]],"date-time":"2022-12-01T20:55:15Z","timestamp":1669928115000},"page":"0402-0406","source":"Crossref","is-referenced-by-count":8,"title":["Effects of NBTI On PMOS Device With Technology Scaling"],"prefix":"10.1109","author":[{"given":"S M","family":"Shakil","sequence":"first","affiliation":[{"name":"Florida Polytechnic University,Electrical and Computer Engineering,Lakeland,Florida,USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Muhammad","family":"Sana Ullah","sequence":"additional","affiliation":[{"name":"Florida Polytechnic University,Electrical and Computer Engineering,Lakeland,Florida,USA"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.902883"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/CCECE47787.2020.9255744"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.3390\/cryst12020186"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/UEMCON47517.2019.8992975"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDER.2004.1356538"},{"journal-title":"Reliability and Failure of Electronic Materials and Devices","year":"2014","author":"ohring","key":"ref14"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/ICCD.1989.63404"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2004.03.019"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2002.1175890"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.51.4218"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.41.2423"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/CAS56377.2022.9934451"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2005.02.001"},{"article-title":"Cmos scaling impacts on reliability, what do we understand?","year":"2008","author":"seyab","key":"ref27"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/MWSCAS.2019.8885275"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2017.2654921"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1145\/1146909.1147172"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2020.3026609"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/SETIT54465.2022.9875475"},{"year":"2009","key":"ref7","article-title":"International technology roadmap for semiconductors"},{"key":"ref2","first-page":"1","article-title":"Subthreshold swing characteristics of multilayer mos2 tunnel fet","author":"sanaullah","year":"2015","journal-title":"2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS)"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1567461"},{"key":"ref9","article-title":"Investigation of the emerging materials based high-efficiency cdte solar cell","author":"shabir","year":"2022","journal-title":"presented at the 7th North American International Conference on Industrial Engineering and Operations Management"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2003.1197745"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2004.1315337"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/ICVD.2004.1260899"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.859570"},{"key":"ref23","first-page":"1","article-title":"Optimization of on current in multilayer molybdenum disulfide (mos2) based tunnel field effect transistor","author":"sanaullah","year":"2015","journal-title":"2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS)"},{"article-title":"Introducing 5-nm finfet technology in microwind","year":"2021","author":"sicard","key":"ref26"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.1999.761593"}],"event":{"name":"2022 IEEE 13th Annual Ubiquitous Computing, Electronics & Mobile Communication Conference (UEMCON)","start":{"date-parts":[[2022,10,26]]},"location":"New York, NY, NY, USA","end":{"date-parts":[[2022,10,29]]}},"container-title":["2022 IEEE 13th Annual Ubiquitous Computing, Electronics & Mobile Communication Conference (UEMCON)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9965569\/9965624\/09965669.pdf?arnumber=9965669","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,12,19]],"date-time":"2022-12-19T20:10:01Z","timestamp":1671480601000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9965669\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,10,26]]},"references-count":30,"URL":"https:\/\/doi.org\/10.1109\/uemcon54665.2022.9965669","relation":{},"subject":[],"published":{"date-parts":[[2022,10,26]]}}}