{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,5]],"date-time":"2026-01-05T04:04:20Z","timestamp":1767585860930,"version":"3.28.0"},"reference-count":21,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,6,12]],"date-time":"2022-06-12T00:00:00Z","timestamp":1654992000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,6,12]],"date-time":"2022-06-12T00:00:00Z","timestamp":1654992000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,6,12]]},"DOI":"10.1109\/vlsitechnologyandcir46769.2022.9830156","type":"proceedings-article","created":{"date-parts":[[2022,7,22]],"date-time":"2022-07-22T16:42:52Z","timestamp":1658508172000},"page":"1-2","source":"Crossref","is-referenced-by-count":16,"title":["Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In<sub>2<\/sub>O<sub>3<\/sub> Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance &gt; 10<sup>9<\/sup> Cycles without V<sub>T<\/sub> Drift Penalty"],"prefix":"10.1109","author":[{"given":"Zehao","family":"Lin","sequence":"first","affiliation":[{"name":"Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mengwei","family":"Si","sequence":"additional","affiliation":[{"name":"Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Peide D.","family":"Ye","sequence":"additional","affiliation":[{"name":"Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"journal-title":"VLSI","year":"2021","author":"sun","key":"ref10"},{"key":"ref11","first-page":"25","author":"muller","year":"2012","journal-title":"VLSIT"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2896231"},{"key":"ref13","first-page":"28.7.1","author":"ali","year":"2019","journal-title":"IEDM"},{"key":"ref14","first-page":"391","author":"sharma","year":"2020","journal-title":"IEDM"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2829122"},{"key":"ref16","first-page":"570","author":"toprasertpong","year":"2019","journal-title":"IEDM"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3108441"},{"key":"ref18","first-page":"122","author":"tasneem","year":"2021","journal-title":"IEDM"},{"journal-title":"EDL","year":"2021","author":"tan","key":"ref19"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1063\/1.5098786"},{"key":"ref3","first-page":"t4.4","author":"lyu","year":"2019","journal-title":"VLSIT"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3072610"},{"key":"ref5","first-page":"342","author":"lyu","year":"2019","journal-title":"IEDM"},{"key":"ref8","first-page":"386","author":"lin","year":"2021","journal-title":"IEDM"},{"key":"ref7","first-page":"t7.3","author":"tahara","year":"2021","journal-title":"VLSI"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-020-2208-x"},{"key":"ref1","doi-asserted-by":"crossref","first-page":"4318","DOI":"10.1021\/nl302049k","volume":"12","author":"muller","year":"2012","journal-title":"Nano Lett"},{"key":"ref9","first-page":"801","author":"dutta","year":"2020","journal-title":"IEDM"},{"key":"ref20","first-page":"374","author":"dutta","year":"2021","journal-title":"IEDM"},{"key":"ref21","first-page":"382","author":"liang","year":"2021","journal-title":"IEDM"}],"event":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","start":{"date-parts":[[2022,6,12]]},"location":"Honolulu, HI, USA","end":{"date-parts":[[2022,6,17]]}},"container-title":["2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9830116\/9830138\/09830156.pdf?arnumber=9830156","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,11,3]],"date-time":"2022-11-03T22:59:45Z","timestamp":1667516385000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9830156\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,6,12]]},"references-count":21,"URL":"https:\/\/doi.org\/10.1109\/vlsitechnologyandcir46769.2022.9830156","relation":{},"subject":[],"published":{"date-parts":[[2022,6,12]]}}}