{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,2]],"date-time":"2026-06-02T09:12:45Z","timestamp":1780391565213,"version":"3.54.1"},"reference-count":12,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,6,12]],"date-time":"2022-06-12T00:00:00Z","timestamp":1654992000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,6,12]],"date-time":"2022-06-12T00:00:00Z","timestamp":1654992000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100003711","name":"Ministry of Science and Technology","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100003711","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,6,12]]},"DOI":"10.1109\/vlsitechnologyandcir46769.2022.9830345","type":"proceedings-article","created":{"date-parts":[[2022,7,22]],"date-time":"2022-07-22T16:42:52Z","timestamp":1658508172000},"page":"1-2","source":"Crossref","is-referenced-by-count":22,"title":["Endurance &gt; 10<sup>11<\/sup> Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO<sub>2<\/sub> to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM"],"prefix":"10.1109","author":[{"given":"C.-Y.","family":"Liao","sequence":"first","affiliation":[{"name":"National Taiwan Normal University,Institute and Undergraduate Program of Electro-Optical Engineering,Taipei,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"K.-Y.","family":"Hsiang","sequence":"additional","affiliation":[{"name":"National Taiwan Normal University,Institute and Undergraduate Program of Electro-Optical Engineering,Taipei,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Z. -F.","family":"Lou","sequence":"additional","affiliation":[{"name":"National Taiwan Normal University,Institute and Undergraduate Program of Electro-Optical Engineering,Taipei,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"H.-C.","family":"Tseng","sequence":"additional","affiliation":[{"name":"National Taiwan Normal University,Institute and Undergraduate Program of Electro-Optical Engineering,Taipei,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"C.-Y.","family":"Lin","sequence":"additional","affiliation":[{"name":"National Taiwan Normal University,Institute and Undergraduate Program of Electro-Optical Engineering,Taipei,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Z.-X.","family":"Li","sequence":"additional","affiliation":[{"name":"National Taiwan Normal University,Institute and Undergraduate Program of Electro-Optical Engineering,Taipei,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"F.-C.","family":"Hsieh","sequence":"additional","affiliation":[{"name":"National Taiwan Normal University,Institute and Undergraduate Program of Electro-Optical Engineering,Taipei,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"C.-C.","family":"Wang","sequence":"additional","affiliation":[{"name":"National Taiwan Normal University,Institute and Undergraduate Program of Electro-Optical Engineering,Taipei,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"F.-S.","family":"Chang","sequence":"additional","affiliation":[{"name":"National Taiwan Normal University,Institute and Undergraduate Program of Electro-Optical Engineering,Taipei,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"W.-C.","family":"Ray","sequence":"additional","affiliation":[{"name":"National Taiwan Normal University,Institute and Undergraduate Program of Electro-Optical Engineering,Taipei,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Y.-Y.","family":"Tseng","sequence":"additional","affiliation":[{"name":"Synopsys Taiwan Co., Ltd.,TCAD Silicon Engineering Group,Hsinchu,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"S. T.","family":"Chang","sequence":"additional","affiliation":[{"name":"National Chung Hsing University,Department of Electrical Engineering,Taichung,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"T.-C.","family":"Chen","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"M. H.","family":"Lee","sequence":"additional","affiliation":[{"name":"National Taiwan Normal University,Institute and Undergraduate Program of Electro-Optical Engineering,Taipei,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.6b13866"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201901244"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1063\/1.4902072"},{"key":"ref6","first-page":"126","author":"xu","year":"2021","journal-title":"IEDM"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2020.3028339"},{"key":"ref5","first-page":"735","author":"lee","year":"2018","journal-title":"IEDM"},{"key":"ref12","first-page":"47","author":"luo","year":"2018","journal-title":"IEDM"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2021.3060589"},{"key":"ref7","first-page":"669","author":"ni","year":"2019","journal-title":"IEDM"},{"key":"ref2","first-page":"383","author":"ali","year":"2020","journal-title":"IEDM"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1063\/1.4866008"},{"key":"ref1","first-page":"709","author":"pe\u0161i?","year":"2021","journal-title":"IEDM"}],"event":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","location":"Honolulu, HI, USA","start":{"date-parts":[[2022,6,12]]},"end":{"date-parts":[[2022,6,17]]}},"container-title":["2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9830116\/9830138\/09830345.pdf?arnumber=9830345","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,8,15]],"date-time":"2022-08-15T20:03:57Z","timestamp":1660593837000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9830345\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,6,12]]},"references-count":12,"URL":"https:\/\/doi.org\/10.1109\/vlsitechnologyandcir46769.2022.9830345","relation":{},"subject":[],"published":{"date-parts":[[2022,6,12]]}}}