{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,23]],"date-time":"2025-05-23T04:49:05Z","timestamp":1747975745828},"reference-count":6,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,6,12]],"date-time":"2022-06-12T00:00:00Z","timestamp":1654992000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,6,12]],"date-time":"2022-06-12T00:00:00Z","timestamp":1654992000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,6,12]]},"DOI":"10.1109\/vlsitechnologyandcir46769.2022.9830421","type":"proceedings-article","created":{"date-parts":[[2022,7,22]],"date-time":"2022-07-22T16:42:52Z","timestamp":1658508172000},"page":"28-29","source":"Crossref","is-referenced-by-count":9,"title":["A 72GS\/s, 8-bit DAC-based Wireline Transmitter in 4nm FinFET CMOS for 200+Gb\/s Serial Links"],"prefix":"10.1109","author":[{"given":"Timothy","family":"Dickson","sequence":"first","affiliation":[{"name":"IBM T. J. Watson Research Center,Yorktown Heights,NY,USA"}]},{"given":"Zeynep","family":"Deniz","sequence":"additional","affiliation":[{"name":"IBM T. J. Watson Research Center,Yorktown Heights,NY,USA"}]},{"given":"Martin","family":"Cochet","sequence":"additional","affiliation":[{"name":"IBM T. J. Watson Research Center,Yorktown Heights,NY,USA"}]},{"given":"Marcel","family":"Kossel","sequence":"additional","affiliation":[{"name":"IBM Research – Zurich,Rueschlikon,Switzerland"}]},{"given":"Thomas","family":"Morf","sequence":"additional","affiliation":[{"name":"IBM Research – Zurich,Rueschlikon,Switzerland"}]},{"given":"Young-Ho","family":"Choi","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Republic of Korea"}]},{"given":"Pier Andrea","family":"Francese","sequence":"additional","affiliation":[{"name":"IBM Research – Zurich,Rueschlikon,Switzerland"}]},{"given":"Matthias","family":"Brandli","sequence":"additional","affiliation":[{"name":"IBM Research – Zurich,Rueschlikon,Switzerland"}]},{"given":"Troy","family":"Beukema","sequence":"additional","affiliation":[{"name":"IBM T. J. Watson Research Center,Yorktown Heights,NY,USA"}]},{"given":"Christian","family":"Baks","sequence":"additional","affiliation":[{"name":"IBM T. J. Watson Research Center,Yorktown Heights,NY,USA"}]},{"given":"Jonathan","family":"Proesel","sequence":"additional","affiliation":[{"name":"IBM T. J. Watson Research Center"}]},{"given":"John","family":"Bulzacchelli","sequence":"additional","affiliation":[{"name":"IBM T. J. Watson Research Center,Yorktown Heights,NY,USA"}]},{"given":"Michael","family":"Beakes","sequence":"additional","affiliation":[{"name":"IBM T. J. Watson Research Center,Yorktown Heights,NY,USA"}]},{"given":"Byoung-Joo","family":"Yoo","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Republic of Korea"}]},{"given":"Hyoungbae","family":"Ahn","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Republic of Korea"}]},{"given":"Dong-Hyuk","family":"Lim","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Republic of Korea"}]},{"given":"Gunil","family":"Kang","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Republic of Korea"}]},{"given":"Sang-Hune","family":"Park","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Republic of Korea"}]},{"given":"Mounir","family":"Meghelli","sequence":"additional","affiliation":[{"name":"IBM T. J. Watson Research Center,Yorktown Heights,NY,USA"}]},{"given":"Hyo-Gyuem","family":"Rhew","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Republic of Korea"}]},{"given":"Daniel","family":"Friedman","sequence":"additional","affiliation":[{"name":"IBM T. J. Watson Research Center,Yorktown Heights,NY,USA"}]},{"given":"Michael","family":"Choi","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Republic of Korea"}]},{"given":"Mehmet","family":"Soyuer","sequence":"additional","affiliation":[{"name":"IBM T. J. Watson Research Center,Yorktown Heights,NY,USA"}]},{"given":"Jongshin","family":"Shin","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Republic of Korea"}]}],"member":"263","reference":[{"journal-title":"ISSCC","year":"2021","author":"choi","key":"ref4"},{"journal-title":"ISSCC","year":"2020","author":"peng","key":"ref3"},{"journal-title":"ISSCC","year":"2021","author":"kim","key":"ref6"},{"journal-title":"ISSCC","year":"2021","author":"nguyen","key":"ref5"},{"journal-title":"ISSCC","year":"2019","author":"deniz","key":"ref2"},{"journal-title":"ISSCC","year":"2021","author":"kossel","key":"ref1"}],"event":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","start":{"date-parts":[[2022,6,12]]},"location":"Honolulu, HI, USA","end":{"date-parts":[[2022,6,17]]}},"container-title":["2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9830116\/9830138\/09830421.pdf?arnumber=9830421","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,8,8]],"date-time":"2022-08-08T20:02:27Z","timestamp":1659988947000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9830421\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,6,12]]},"references-count":6,"URL":"https:\/\/doi.org\/10.1109\/vlsitechnologyandcir46769.2022.9830421","relation":{},"subject":[],"published":{"date-parts":[[2022,6,12]]}}}