{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,26]],"date-time":"2026-02-26T15:52:33Z","timestamp":1772121153433,"version":"3.50.1"},"reference-count":5,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,6,12]],"date-time":"2022-06-12T00:00:00Z","timestamp":1654992000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,6,12]],"date-time":"2022-06-12T00:00:00Z","timestamp":1654992000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,6,12]]},"DOI":"10.1109\/vlsitechnologyandcir46769.2022.9830442","type":"proceedings-article","created":{"date-parts":[[2022,7,22]],"date-time":"2022-07-22T16:42:52Z","timestamp":1658508172000},"page":"86-87","source":"Crossref","is-referenced-by-count":4,"title":["A 12-bit 8GS\/s RF Sampling DAC with Code-Dependent Nonlinearity Compensation and Intersegmental Current-Mismatch Calibration in 5nm FinFET"],"prefix":"10.1109","author":[{"given":"Byeongwoo","family":"Koo","sequence":"first","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]},{"given":"Sunghan","family":"Do","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]},{"given":"Sangpil","family":"Nam","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]},{"given":"Heewook","family":"Shin","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]},{"given":"Sungno","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]},{"given":"Eunhye","family":"Oh","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]},{"given":"Jaemin","family":"Hong","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]},{"given":"Jungho","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]},{"given":"Youngjae","family":"Cho","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]},{"given":"Michael","family":"Choi","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]},{"given":"Jongshin","family":"Shin","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Hwaseong,Korea"}]}],"member":"263","reference":[{"key":"ref4","first-page":"347","author":"spiridon","year":"2015","journal-title":"ESSCC"},{"key":"ref3","first-page":"1","author":"ravinuthula","year":"2016","journal-title":"VLSI Symp"},{"key":"ref5","first-page":"280","author":"erdmann","year":"2017","journal-title":"ISSCC"},{"key":"ref2","first-page":"174","author":"gruber","year":"2021","journal-title":"ISSCC"},{"key":"ref1","first-page":"1","author":"huang","year":"2020","journal-title":"VLSI Symp"}],"event":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","location":"Honolulu, HI, USA","start":{"date-parts":[[2022,6,12]]},"end":{"date-parts":[[2022,6,17]]}},"container-title":["2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9830116\/9830138\/09830442.pdf?arnumber=9830442","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,8,15]],"date-time":"2022-08-15T20:03:59Z","timestamp":1660593839000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9830442\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,6,12]]},"references-count":5,"URL":"https:\/\/doi.org\/10.1109\/vlsitechnologyandcir46769.2022.9830442","relation":{},"subject":[],"published":{"date-parts":[[2022,6,12]]}}}