{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,8]],"date-time":"2026-05-08T15:54:29Z","timestamp":1778255669139,"version":"3.51.4"},"reference-count":13,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,6,16]],"date-time":"2024-06-16T00:00:00Z","timestamp":1718496000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,6,16]],"date-time":"2024-06-16T00:00:00Z","timestamp":1718496000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,6,16]]},"DOI":"10.1109\/vlsitechnologyandcir46783.2024.10631328","type":"proceedings-article","created":{"date-parts":[[2024,8,26]],"date-time":"2024-08-26T17:23:31Z","timestamp":1724693011000},"page":"1-2","source":"Crossref","is-referenced-by-count":6,"title":["HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85\u00b0C"],"prefix":"10.1109","author":[{"given":"Yusuke","family":"Shuto","sequence":"first","affiliation":[{"name":"Sony Semiconductor Solutions Corporation,Atsugi,Kanagawa,Japan,243-0014"}]},{"given":"Jun","family":"Okuno","sequence":"additional","affiliation":[{"name":"Sony Semiconductor Solutions Corporation,Atsugi,Kanagawa,Japan,243-0014"}]},{"given":"Tsubasa","family":"Yonai","sequence":"additional","affiliation":[{"name":"Sony Semiconductor Solutions Corporation,Atsugi,Kanagawa,Japan,243-0014"}]},{"given":"Ryo","family":"Ono","sequence":"additional","affiliation":[{"name":"Sony Semiconductor Solutions Corporation,Atsugi,Kanagawa,Japan,243-0014"}]},{"given":"Peter","family":"Reinig","sequence":"additional","affiliation":[{"name":"Fraunhofer IPMS - Center Nanoelectronics Technologies,Germany"}]},{"given":"Maximilian","family":"Lederer","sequence":"additional","affiliation":[{"name":"Fraunhofer IPMS - Center Nanoelectronics Technologies,Germany"}]},{"given":"Konrad","family":"Seidel","sequence":"additional","affiliation":[{"name":"Fraunhofer IPMS - Center Nanoelectronics Technologies,Germany"}]},{"given":"Ruben","family":"Alcala","sequence":"additional","affiliation":[{"name":"NaMLab gGmbH,Germany"}]},{"given":"Thomas","family":"Mikolajick","sequence":"additional","affiliation":[{"name":"NaMLab gGmbH,Germany"}]},{"given":"Uwe","family":"Schroeder","sequence":"additional","affiliation":[{"name":"NaMLab gGmbH,Germany"}]},{"given":"Taku","family":"Umebayashi","sequence":"additional","affiliation":[{"name":"Sony Semiconductor Solutions Corporation,Atsugi,Kanagawa,Japan,243-0014"}]},{"given":"Kentaro","family":"Akiyama","sequence":"additional","affiliation":[{"name":"Sony Semiconductor Solutions Corporation,Atsugi,Kanagawa,Japan,243-0014"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1007\/springerreference_37557"},{"key":"ref2","first-page":"19.7.1","author":"Duenkel","year":"2017","journal-title":"IEDM"},{"key":"ref3","first-page":"15.7.1","author":"Francois","year":"2019","journal-title":"IEDM"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.5772\/139"},{"key":"ref5","first-page":"1","author":"Okuno","year":"2021","journal-title":"IMW"},{"key":"ref6","first-page":"11","author":"Okuno","year":"2023","journal-title":"IEDM"},{"key":"ref7","first-page":"33.1.1","author":"Francois","year":"2021","journal-title":"IEDM"},{"key":"ref8","first-page":"355","author":"Seidel","year":"2022","journal-title":"VLSI"},{"key":"ref9","author":"Fliesler","year":"2008","journal-title":"Joint NVSD Mw-ICMTD"},{"key":"ref10","first-page":"C2","author":"Suzuki","year":"2023","journal-title":"VLSI"},{"key":"ref11","first-page":"1483","author":"Chiu","year":"2012","journal-title":"IEEE JSSC"},{"key":"ref12","first-page":"522","author":"Miwa","year":"2001","journal-title":"IEEE JSSC"},{"key":"ref13","first-page":"T156","author":"Kobayashi","year":"2017","journal-title":"VLSI"}],"event":{"name":"2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","location":"Honolulu, HI, USA","start":{"date-parts":[[2024,6,16]]},"end":{"date-parts":[[2024,6,20]]}},"container-title":["2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10631290\/10631310\/10631328.pdf?arnumber=10631328","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,30]],"date-time":"2024-08-30T10:31:31Z","timestamp":1725013891000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10631328\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,6,16]]},"references-count":13,"URL":"https:\/\/doi.org\/10.1109\/vlsitechnologyandcir46783.2024.10631328","relation":{},"subject":[],"published":{"date-parts":[[2024,6,16]]}}}