{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,13]],"date-time":"2026-06-13T05:50:28Z","timestamp":1781329828693,"version":"3.54.1"},"reference-count":8,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,6,16]],"date-time":"2024-06-16T00:00:00Z","timestamp":1718496000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,6,16]],"date-time":"2024-06-16T00:00:00Z","timestamp":1718496000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,6,16]]},"DOI":"10.1109\/vlsitechnologyandcir46783.2024.10631360","type":"proceedings-article","created":{"date-parts":[[2024,8,26]],"date-time":"2024-08-26T17:23:31Z","timestamp":1724693011000},"page":"1-2","source":"Crossref","is-referenced-by-count":10,"title":["Achieving 1-nm-Scale Equivalent Oxide Thickness Top Gate Dielectric on Monolayer Transition Metal Dichalcogenide Transistors with CMOS-Friendly Approaches"],"prefix":"10.1109","author":[{"given":"Jung-Soo","family":"Ko","sequence":"first","affiliation":[{"name":"Stanford University,Electrical Engineering,Stanford,CA,USA,94305"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Alex","family":"Shearer","sequence":"additional","affiliation":[{"name":"Stanford University,Chemical Engineering,Stanford,CA,USA,94305"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sol","family":"Lee","sequence":"additional","affiliation":[{"name":"Yonsei University,Department of Physics,Seoul,Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kathryn","family":"Neilson","sequence":"additional","affiliation":[{"name":"Stanford University,Electrical Engineering,Stanford,CA,USA,94305"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Marc","family":"Jaikissoon","sequence":"additional","affiliation":[{"name":"Stanford University,Electrical Engineering,Stanford,CA,USA,94305"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kwanpyo","family":"Kim","sequence":"additional","affiliation":[{"name":"Yonsei University,Department of Physics,Seoul,Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Stacey","family":"Bent","sequence":"additional","affiliation":[{"name":"Stanford University,Chemical Engineering,Stanford,CA,USA,94305"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Krishna","family":"Saraswat","sequence":"additional","affiliation":[{"name":"Stanford University,Electrical Engineering,Stanford,CA,USA,94305"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Eric","family":"Pop","sequence":"additional","affiliation":[{"name":"Stanford University,Electrical Engineering,Stanford,CA,USA,94305"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","author":"English","year":"2016","journal-title":"Nano Lett."},{"key":"ref2","author":"Illarionov","year":"2020","journal-title":"Nat. Electron"},{"key":"ref3","author":"Uchiyama","year":"2023","journal-title":"Small"},{"key":"ref4","author":"Lee","year":"2022","journal-title":"IEDM"},{"key":"ref5","author":"Xu","year":"2023","journal-title":"Nat. Mater."},{"key":"ref6","author":"Ko","year":"2023","journal-title":"ESSDERC"},{"key":"ref7","author":"Li","year":"2019","journal-title":"Nat. Electron"},{"key":"ref8","author":"Kita","year":"2009","journal-title":"Appl. Phys. Lett."}],"event":{"name":"2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","location":"Honolulu, HI, USA","start":{"date-parts":[[2024,6,16]]},"end":{"date-parts":[[2024,6,20]]}},"container-title":["2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10631290\/10631310\/10631360.pdf?arnumber=10631360","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,9,2]],"date-time":"2024-09-02T04:43:50Z","timestamp":1725252230000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10631360\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,6,16]]},"references-count":8,"URL":"https:\/\/doi.org\/10.1109\/vlsitechnologyandcir46783.2024.10631360","relation":{},"subject":[],"published":{"date-parts":[[2024,6,16]]}}}