{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,29]],"date-time":"2026-01-29T22:00:40Z","timestamp":1769724040645,"version":"3.49.0"},"reference-count":3,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,6,16]],"date-time":"2024-06-16T00:00:00Z","timestamp":1718496000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,6,16]],"date-time":"2024-06-16T00:00:00Z","timestamp":1718496000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,6,16]]},"DOI":"10.1109\/vlsitechnologyandcir46783.2024.10631481","type":"proceedings-article","created":{"date-parts":[[2024,8,26]],"date-time":"2024-08-26T17:23:31Z","timestamp":1724693011000},"page":"1-2","source":"Crossref","is-referenced-by-count":2,"title":["An Offset-Compensated Charge-Transfer Pre-Sensing Bit-Line Sense-Amplifier for Low-Voltage DRAM"],"prefix":"10.1109","author":[{"given":"Kyeongtae","family":"Nam","sequence":"first","affiliation":[{"name":"Samsung Electronics,DRAM Product & Technology,Hwasung,Gyeonggi-do,Korea"}]},{"given":"Jaehyuk","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics,DRAM Product & Technology,Hwasung,Gyeonggi-do,Korea"}]},{"given":"Dongil","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics,DRAM Product & Technology,Hwasung,Gyeonggi-do,Korea"}]},{"given":"Kyuchang","family":"Kang","sequence":"additional","affiliation":[{"name":"Samsung Electronics,DRAM Product & Technology,Hwasung,Gyeonggi-do,Korea"}]},{"given":"Sangyun","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics,DRAM Product & Technology,Hwasung,Gyeonggi-do,Korea"}]},{"given":"Changyoung","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics,DRAM Product & Technology,Hwasung,Gyeonggi-do,Korea"}]},{"given":"Hyunchul","family":"Yoon","sequence":"additional","affiliation":[{"name":"Samsung Electronics,DRAM Product & Technology,Hwasung,Gyeonggi-do,Korea"}]},{"given":"Donggeon","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics,DRAM Product & Technology,Hwasung,Gyeonggi-do,Korea"}]},{"given":"Bokyeon","family":"Won","sequence":"additional","affiliation":[{"name":"Samsung Electronics,DRAM Product & Technology,Hwasung,Gyeonggi-do,Korea"}]},{"given":"Jaejoon","family":"Song","sequence":"additional","affiliation":[{"name":"Samsung Electronics,DRAM Product & Technology,Hwasung,Gyeonggi-do,Korea"}]},{"given":"Incheol","family":"Nam","sequence":"additional","affiliation":[{"name":"Samsung Electronics,DRAM Product & Technology,Hwasung,Gyeonggi-do,Korea"}]},{"given":"Young-Hun","family":"Seo","sequence":"additional","affiliation":[{"name":"Samsung Electronics,DRAM Product & Technology,Hwasung,Gyeonggi-do,Korea"}]},{"given":"Jeong-Don","family":"Ihm","sequence":"additional","affiliation":[{"name":"Samsung Electronics,DRAM Product & Technology,Hwasung,Gyeonggi-do,Korea"}]},{"given":"Changsik","family":"Yoo","sequence":"additional","affiliation":[{"name":"Samsung Electronics,DRAM Product & Technology,Hwasung,Gyeonggi-do,Korea"}]},{"given":"Sangjoon","family":"Hwang","sequence":"additional","affiliation":[{"name":"Samsung Electronics,DRAM Product & Technology,Hwasung,Gyeonggi-do,Korea"}]}],"member":"263","reference":[{"key":"ref1","first-page":"1721","volume-title":"JSSC","volume":"32","author":"Tsukude","year":"1997"},{"key":"ref2","first-page":"694","volume-title":"JSSC","volume":"39","author":"Sim","year":"2004"},{"key":"ref3","volume":"531","author":"Seo","year":"2015","journal-title":"U.S. Patent 9,202"}],"event":{"name":"2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","location":"Honolulu, HI, USA","start":{"date-parts":[[2024,6,16]]},"end":{"date-parts":[[2024,6,20]]}},"container-title":["2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10631290\/10631310\/10631481.pdf?arnumber=10631481","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,12,23]],"date-time":"2024-12-23T19:06:57Z","timestamp":1734980817000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10631481\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,6,16]]},"references-count":3,"URL":"https:\/\/doi.org\/10.1109\/vlsitechnologyandcir46783.2024.10631481","relation":{},"subject":[],"published":{"date-parts":[[2024,6,16]]}}}