{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,24]],"date-time":"2026-04-24T14:54:33Z","timestamp":1777042473924,"version":"3.51.4"},"reference-count":6,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,6,16]],"date-time":"2024-06-16T00:00:00Z","timestamp":1718496000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,6,16]],"date-time":"2024-06-16T00:00:00Z","timestamp":1718496000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,6,16]]},"DOI":"10.1109\/vlsitechnologyandcir46783.2024.10631504","type":"proceedings-article","created":{"date-parts":[[2024,8,26]],"date-time":"2024-08-26T17:23:31Z","timestamp":1724693011000},"page":"1-2","source":"Crossref","is-referenced-by-count":4,"title":["Single Metal BCAT Breakthrough to Open a New Era of 12 nm DRAM and Beyond"],"prefix":"10.1109","author":[{"given":"Kyosuk","family":"Chae","sequence":"first","affiliation":[{"name":"Samsung Electronics Co., Ltd.,Memory Business,Hwasungsi,Gyeonggido,Republic of Korea"}]},{"given":"Taiuk","family":"Rim","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd.,Memory Business,Hwasungsi,Gyeonggido,Republic of Korea"}]},{"given":"Youngwoo","family":"Son","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd.,Memory Business,Hwasungsi,Gyeonggido,Republic of Korea"}]},{"given":"Heejae","family":"Choi","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd.,Memory Business,Hwasungsi,Gyeonggido,Republic of Korea"}]},{"given":"Jinseong","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd.,Memory Business,Hwasungsi,Gyeonggido,Republic of Korea"}]},{"given":"Shinwoo","family":"Jeong","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd.,Memory Business,Hwasungsi,Gyeonggido,Republic of Korea"}]},{"given":"Jieun","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd.,Memory Business,Hwasungsi,Gyeonggido,Republic of Korea"}]},{"given":"Dongin","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd.,Memory Business,Hwasungsi,Gyeonggido,Republic of Korea"}]},{"given":"Byunghyun","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd.,Memory Business,Hwasungsi,Gyeonggido,Republic of Korea"}]},{"given":"Dongsoo","family":"Woo","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd.,Memory Business,Hwasungsi,Gyeonggido,Republic of Korea"}]},{"given":"Seguen","family":"Park","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd.,Memory Business,Hwasungsi,Gyeonggido,Republic of Korea"}]},{"given":"Sangjun","family":"Hwang","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co., Ltd.,Memory Business,Hwasungsi,Gyeonggido,Republic of Korea"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.5772\/139"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"3770","DOI":"10.1063\/1.1713945","volume":"36","author":"Deal","year":"1965","journal-title":"J. Appl. Phys."},{"key":"ref3","doi-asserted-by":"crossref","first-page":"2679","DOI":"10.1143\/JJAP.40.2679","volume":"40","author":"Moriwaki","year":"2001","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref4","first-page":"1","volume-title":"IRPS","author":"Rim","year":"2023"},{"key":"ref5","doi-asserted-by":"crossref","first-page":"391","DOI":"10.1109\/LED.2019.2891260","volume":"40","author":"Yang","year":"2019","journal-title":"IEEE Elecron Dev. Lett."},{"key":"ref6","first-page":"1","volume-title":"IRPS","author":"Han","year":"2021"}],"event":{"name":"2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","location":"Honolulu, HI, USA","start":{"date-parts":[[2024,6,16]]},"end":{"date-parts":[[2024,6,20]]}},"container-title":["2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10631290\/10631310\/10631504.pdf?arnumber=10631504","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,8,31]],"date-time":"2024-08-31T04:49:46Z","timestamp":1725079786000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10631504\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,6,16]]},"references-count":6,"URL":"https:\/\/doi.org\/10.1109\/vlsitechnologyandcir46783.2024.10631504","relation":{},"subject":[],"published":{"date-parts":[[2024,6,16]]}}}