{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,10]],"date-time":"2026-06-10T16:34:00Z","timestamp":1781109240789,"version":"3.54.1"},"reference-count":16,"publisher":"IEEE","license":[{"start":{"date-parts":[[2025,4,28]],"date-time":"2025-04-28T00:00:00Z","timestamp":1745798400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,4,28]],"date-time":"2025-04-28T00:00:00Z","timestamp":1745798400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,4,28]]},"DOI":"10.1109\/vts65138.2025.11022847","type":"proceedings-article","created":{"date-parts":[[2025,6,10]],"date-time":"2025-06-10T17:48:39Z","timestamp":1749577719000},"page":"1-5","source":"Crossref","is-referenced-by-count":1,"title":["Characterization and All-Region Virtual-Source Modeling of 40 nm GaN HEMT Technology for High Frequency IC Design"],"prefix":"10.1109","author":[{"given":"Kexin","family":"Li","sequence":"first","affiliation":[{"name":"Arizona State University,School of Electrical, Computer and Energy Engineering,AZ,US"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Armagan","family":"Dascurcu","sequence":"additional","affiliation":[{"name":"Columbia University,Department of Electrical Engineering,NY,US"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hari","family":"Vemuri","sequence":"additional","affiliation":[{"name":"Columbia University,Department of Electrical Engineering,NY,US"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Harish","family":"Krishnaswamy","sequence":"additional","affiliation":[{"name":"Columbia University,Department of Electrical Engineering,NY,US"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2016.7838337"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2023.3317280"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IMS19712.2021.9575038"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ICTC52510.2021.9621019"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2023.3259383"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2011.2117010"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IMS30576.2020.9223949"},{"key":"ref8","first-page":"309","article-title":"On the large-signal modelling of AlGaN\/GaN HEMTs and SiC MESFETs","author":"Angelov","year":"2005","journal-title":"GAAS"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2012.6229068"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2016.7838341"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1063\/1.5064385"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2012.6479113"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/16.974760"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2010.5703448"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/22.3650"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/bcicts54660.2023.10310784"}],"event":{"name":"2025 IEEE 43rd VLSI Test Symposium (VTS)","location":"Tempe, AZ, USA","start":{"date-parts":[[2025,4,28]]},"end":{"date-parts":[[2025,4,30]]}},"container-title":["2025 IEEE 43rd VLSI Test Symposium (VTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/11022705\/11022774\/11022847.pdf?arnumber=11022847","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,11]],"date-time":"2025-06-11T05:14:36Z","timestamp":1749618876000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/11022847\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,4,28]]},"references-count":16,"URL":"https:\/\/doi.org\/10.1109\/vts65138.2025.11022847","relation":{},"subject":[],"published":{"date-parts":[[2025,4,28]]}}}