{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,10]],"date-time":"2025-12-10T09:05:34Z","timestamp":1765357534668,"version":"3.28.0"},"reference-count":26,"publisher":"IEEE","license":[{"start":{"date-parts":[[2023,11,15]],"date-time":"2023-11-15T00:00:00Z","timestamp":1700006400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,11,15]],"date-time":"2023-11-15T00:00:00Z","timestamp":1700006400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2023,11,15]]},"DOI":"10.1109\/icdcm54452.2023.10433588","type":"proceedings-article","created":{"date-parts":[[2024,2,19]],"date-time":"2024-02-19T14:54:02Z","timestamp":1708354442000},"page":"1-5","source":"Crossref","is-referenced-by-count":7,"title":["A Novel DC Circuit Breaker with an Absorbing Branch Based on TVS Diodes"],"prefix":"10.1109","author":[{"given":"Ana Rafaela","family":"Figueiredo Bento","sequence":"first","affiliation":[{"name":"University of Beira Interior,CISE - Electromechatronic Systems Research Centre,Covilh&#x00E3;,Portugal,P \u2013 6201-001"}]},{"given":"Fernando","family":"Bento","sequence":"additional","affiliation":[{"name":"University of Beira Interior,CISE - Electromechatronic Systems Research Centre,Covilh&#x00E3;,Portugal,P \u2013 6201-001"}]},{"given":"Antonio J.","family":"Marques Cardoso","sequence":"additional","affiliation":[{"name":"University of Beira Interior,CISE - Electromechatronic Systems Research Centre,Covilh&#x00E3;,Portugal,P \u2013 6201-001"}]}],"member":"263","reference":[{"doi-asserted-by":"publisher","key":"ref1","DOI":"10.1109\/iecon49645.2022.9968909"},{"key":"ref2","article-title":"Modelling of metal oxide varistors response to thermally-induced stress using linear regression technique","volume-title":"University of Johannesburg","author":"Muremi","year":"2018"},{"doi-asserted-by":"publisher","key":"ref3","DOI":"10.1109\/apec.2016.7468160"},{"doi-asserted-by":"publisher","key":"ref4","DOI":"10.1109\/tie.2011.2141095"},{"doi-asserted-by":"publisher","key":"ref5","DOI":"10.1109\/tpel.2023.3249798"},{"doi-asserted-by":"publisher","key":"ref6","DOI":"10.1109\/vppc.2008.4677770"},{"doi-asserted-by":"publisher","key":"ref7","DOI":"10.1109\/tpel.2010.2042302"},{"doi-asserted-by":"publisher","key":"ref8","DOI":"10.1109\/apec42165.2021.9487424"},{"doi-asserted-by":"publisher","key":"ref9","DOI":"10.1109\/ichve.2018.8641858"},{"issue":"3","key":"ref10","first-page":"1","article-title":"Cheap Varistors or Expensive TVS-diodes?","volume":"4","author":"Gurevich","year":"2018","journal-title":"International Journal of Research Studies in Electrical and Electronics Engineering"},{"doi-asserted-by":"publisher","key":"ref11","DOI":"10.1109\/intlec.2016.7749139"},{"key":"ref12","first-page":"1","article-title":"Bidirectional Switch Based on Silicon High Voltage Superjunction MOSFETs and TVS Diode Used in Low Voltage DC SSCB","volume-title":"inPCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management","author":"Askan"},{"doi-asserted-by":"publisher","key":"ref13","DOI":"10.1109\/icpadm.2000.876110"},{"volume-title":"Principal Failure Modes for Surge Arresters - INMR","year":"2023","key":"ref14"},{"key":"ref15","article-title":"How to select a Surge Diode","volume-title":"Texas Instruments","author":"Forbes","year":"2019"},{"key":"ref16","article-title":"How to select a Surge Diode","volume-title":"Application Report Texas Instruments","author":"Forbes","year":"2019"},{"key":"ref17","article-title":"An Introduction to Transient Voltage Suppression Devices","volume-title":"ON Semiconductor","author":"Lepkowski","year":"2005"},{"doi-asserted-by":"publisher","key":"ref18","DOI":"10.1007\/978-3-031-14186-7_11"},{"volume-title":"Microsemi Micronote 114","author":"Walters","article-title":"Derating Silicon Transient Voltage Suppressors at Elevated Temperatures","key":"ref19"},{"doi-asserted-by":"publisher","key":"ref20","DOI":"10.1109\/tpel.2022.3199162"},{"doi-asserted-by":"publisher","key":"ref21","DOI":"10.1109\/tpel.2013.2272857"},{"doi-asserted-by":"publisher","key":"ref22","DOI":"10.1109\/IECON49645.2022.9968909"},{"doi-asserted-by":"publisher","key":"ref23","DOI":"10.1109\/tpel.2016.2574751"},{"author":"Zhang","journal-title":"Snubber Considerations for IGBT Applications","key":"ref24"},{"doi-asserted-by":"publisher","key":"ref25","DOI":"10.1134\/s1063739716070064"},{"volume-title":"Littelfuse","year":"2023","article-title":"TVS diodes SMDJ series datasheet","key":"ref26"}],"event":{"name":"2023 IEEE Fifth International Conference on DC Microgrids (ICDCM)","start":{"date-parts":[[2023,11,15]]},"location":"Auckland, New Zealand","end":{"date-parts":[[2023,11,17]]}},"container-title":["2023 IEEE Fifth International Conference on DC Microgrids (ICDCM)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10433554\/10433583\/10433588.pdf?arnumber=10433588","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,3,13]],"date-time":"2024-03-13T17:11:18Z","timestamp":1710349878000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10433588\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,11,15]]},"references-count":26,"URL":"https:\/\/doi.org\/10.1109\/icdcm54452.2023.10433588","relation":{},"subject":[],"published":{"date-parts":[[2023,11,15]]}}}