{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,22]],"date-time":"2026-01-22T10:14:37Z","timestamp":1769076877339,"version":"3.49.0"},"reference-count":23,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2018,1,1]],"date-time":"2018-01-01T00:00:00Z","timestamp":1514764800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/OAPA.html"}],"funder":[{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["POCI-01-0145-FEDER-007688"],"award-info":[{"award-number":["POCI-01-0145-FEDER-007688"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["SFRH\/BD\/122286\/2016"],"award-info":[{"award-number":["SFRH\/BD\/122286\/2016"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]},{"name":"European Community H2020 Program","award":["716510"],"award-info":[{"award-number":["716510"]}]},{"name":"European Community H2020 Program","award":["692373"],"award-info":[{"award-number":["692373"]}]},{"DOI":"10.13039\/501100001843","name":"Early Career Research","doi-asserted-by":"publisher","award":["ECR\/2017\/000931"],"award-info":[{"award-number":["ECR\/2017\/000931"]}],"id":[{"id":"10.13039\/501100001843","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE J. Electron Devices Soc."],"published-print":{"date-parts":[[2018]]},"DOI":"10.1109\/jeds.2018.2850219","type":"journal-article","created":{"date-parts":[[2018,6,25]],"date-time":"2018-06-25T23:34:50Z","timestamp":1529969690000},"page":"760-765","source":"Crossref","is-referenced-by-count":37,"title":["High-Gain Transimpedance Amplifier for Flexible Radiation Dosimetry Using InGaZnO TFTs"],"prefix":"10.1109","volume":"6","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-9265-448X","authenticated-orcid":false,"given":"Pydi Ganga","family":"Bahubalindruni","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5705-4331","authenticated-orcid":false,"given":"Jorge","family":"Martins","sequence":"additional","affiliation":[]},{"given":"Ana","family":"Santa","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7567-0792","authenticated-orcid":false,"given":"Vitor","family":"Tavares","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1997-7669","authenticated-orcid":false,"given":"Rodrigo","family":"Martins","sequence":"additional","affiliation":[]},{"given":"Elvira","family":"Fortunato","sequence":"additional","affiliation":[]},{"given":"Pedro","family":"Barquinha","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"crossref","DOI":"10.1038\/ncomms13063","article-title":"Direct X-ray photoconversion in flexible organic thin film devices operated below 1 V","volume":"7","author":"basirico","year":"2016","journal-title":"Nat Commun"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2738665"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/JDT.2014.2378058"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/ASSCC.2014.7008923"},{"key":"ref14","first-page":"314","article-title":"A 6b 10MS\/s current-steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz","author":"raiteri","year":"2012","journal-title":"Proc Int Solid-State Circuits Conf (ISSCC)"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2017.2716368"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1049\/el.2011.0659"},{"key":"ref17","author":"correia","year":"2015","journal-title":"A Second-Order $\\Sigma \\Delta $ ADC Using Sputtered IGZO TFTs"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1063\/1.4960200"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2280024"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1080\/00223131.2015.1037810"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1063\/1.3458799"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1088\/2057-1976\/aa78ae"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201500489"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1039\/C4FD00102H"},{"key":"ref7","doi-asserted-by":"crossref","first-page":"488","DOI":"10.1038\/nature03090","article-title":"Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors","volume":"432","author":"nomura","year":"2004","journal-title":"Nature"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1063\/1.3039779"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201503090"},{"key":"ref1","doi-asserted-by":"crossref","first-page":"4097","DOI":"10.1038\/ncomms5097","article-title":"Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors","volume":"5","author":"chen","year":"2014","journal-title":"Nat Commun"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1038\/srep25734"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2010.2043886"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1049\/el:19790022"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1007\/s10470-016-0706-4"}],"container-title":["IEEE Journal of the Electron Devices Society"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6245494\/8232486\/08394619.pdf?arnumber=8394619","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,26]],"date-time":"2022-01-26T12:32:03Z","timestamp":1643200323000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8394619\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018]]},"references-count":23,"URL":"https:\/\/doi.org\/10.1109\/jeds.2018.2850219","relation":{},"ISSN":["2168-6734"],"issn-type":[{"value":"2168-6734","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018]]}}}