{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,24]],"date-time":"2025-11-24T23:41:40Z","timestamp":1764027700089,"version":"3.37.3"},"reference-count":33,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"5","license":[{"start":{"date-parts":[[2017,5,1]],"date-time":"2017-05-01T00:00:00Z","timestamp":1493596800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"funder":[{"DOI":"10.13039\/501100004837","name":"Ministerio de Ciencia e Innovaci\u00f3n and Miniterio de Econom\u00eda y Competetitividad of Spain","doi-asserted-by":"publisher","award":["RUE (CSD2009-00046)","CAVE (TEC2012-38247)"],"award-info":[{"award-number":["RUE (CSD2009-00046)","CAVE (TEC2012-38247)"]}],"id":[{"id":"10.13039\/501100004837","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Juan de la Cierva Program","award":["JCI-2012-14509"],"award-info":[{"award-number":["JCI-2012-14509"]}]},{"name":"Juan de la Cierva-Incorporaci\u00f3n Program","award":["IJCI-2014-19473"],"award-info":[{"award-number":["IJCI-2014-19473"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Electron Device Lett."],"published-print":{"date-parts":[[2017,5]]},"DOI":"10.1109\/led.2017.2682795","type":"journal-article","created":{"date-parts":[[2017,3,15]],"date-time":"2017-03-15T21:26:12Z","timestamp":1489613172000},"page":"611-614","source":"Crossref","is-referenced-by-count":20,"title":["Effects of Gd<sub>2<\/sub>O<sub>3<\/sub> Gate Dielectric on Proton-Irradiated AlGaN\/GaN HEMTs"],"prefix":"10.1109","volume":"38","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-8251-0703","authenticated-orcid":false,"given":"Z.","family":"Gao","sequence":"first","affiliation":[]},{"given":"M. F.","family":"Romero","sequence":"additional","affiliation":[]},{"given":"A.","family":"Redondo-Cubero","sequence":"additional","affiliation":[]},{"given":"M. A.","family":"Pampillon","sequence":"additional","affiliation":[]},{"given":"E.","family":"San Andres","sequence":"additional","affiliation":[]},{"given":"F.","family":"Calle","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1116\/1.4864070"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1116\/1.4788904"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2013.6695575"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1116\/1.4866401"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2000949"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2564301"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2013.03.094"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1149\/06914.0129ecst"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1007\/s11433-011-4572-x"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2004.832549"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1016\/S0038-1101(02)00468-9"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2003.820792"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2004.839199"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2006.885006"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2015.2488650"},{"key":"ref4","doi-asserted-by":"crossref","first-page":"37104","DOI":"10.1088\/1674-1056\/21\/3\/037104","article-title":"Neutron irradiation effects on AlGaN\/GaN high electron mobility transistors","volume":"21","author":"l\u00fc","year":"2012","journal-title":"Chin Phys B"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1116\/1.4959786"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2379664"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2331001"},{"key":"ref29","first-page":"3060","article-title":"Process dependence of proton-induced degradation in GaN HEMTs","volume":"57","author":"roy","year":"2010","journal-title":"IEEE Trans Nucl Sci"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2363433"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2361436"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2284851"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2382677"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2204888"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2367093"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2013.2278314"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1116\/1.3676034"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2011.2170433"},{"key":"ref24","first-page":"40","volume":"4","author":"ziegler","year":"1985","journal-title":"The Stopping and Range of Ions in Solids"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1149\/06914.0121ecst"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1116\/1.4836577"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1116\/1.4813785"}],"container-title":["IEEE Electron Device Letters"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/55\/7909048\/07879197.pdf?arnumber=7879197","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T11:38:59Z","timestamp":1641987539000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/7879197\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,5]]},"references-count":33,"journal-issue":{"issue":"5"},"URL":"https:\/\/doi.org\/10.1109\/led.2017.2682795","relation":{},"ISSN":["0741-3106","1558-0563"],"issn-type":[{"type":"print","value":"0741-3106"},{"type":"electronic","value":"1558-0563"}],"subject":[],"published":{"date-parts":[[2017,5]]}}}