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We report: Measurements on through\u2010bond electronic transport properties of nanoscale metal\u20101,4\u2010phenylene diisocyanide\u2010metal junctions are reported, where nonohmic thermionic emission is the dominant process, with isocyanide\u2010Pd showing the lowest thermionic barrier of 0.22 eV; robust and large reversible switching behavior in an electronic device that utilizes molecules containing redox centers as the active component, exhibiting negative differential resistance (NDR) and large on\u2010off peak\u2010to\u2010valley ratio (PVR) are realized; erasable storage of higher conductivity states in these redox\u2010center\u2010containing molecular devices are observed; and a two\u2010terminal electronically programmable and erasable molecular memory cell with long bit retention time is demonstrated.<\/jats:p>","DOI":"10.1111\/j.1749-6632.2002.tb03026.x","type":"journal-article","created":{"date-parts":[[2010,7,20]],"date-time":"2010-07-20T23:23:22Z","timestamp":1279668202000},"page":"69-99","source":"Crossref","is-referenced-by-count":75,"title":["Molecular Wires, Switches, and Memories"],"prefix":"10.1111","volume":"960","author":[{"given":"J.","family":"CHEN","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"W.","family":"WANG","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"J.","family":"KLEMIC","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"M. 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