{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,11]],"date-time":"2026-09-11T20:02:09Z","timestamp":1789156929200,"version":"build-2803163510"},"reference-count":25,"publisher":"American Vacuum Society","issue":"2","funder":[{"DOI":"10.13039\/100000078","name":"Division of Materials Research","doi-asserted-by":"publisher","award":["DMR1609973"],"award-info":[{"award-number":["DMR1609973"]}],"id":[{"id":"10.13039\/100000078","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000165","name":"Division of Chemistry","doi-asserted-by":"publisher","award":["9724307,1428149"],"award-info":[{"award-number":["9724307,1428149"]}],"id":[{"id":"10.13039\/100000165","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000057","name":"National Institute of General Medical Sciences","doi-asserted-by":"publisher","award":["P30-GM110758"],"award-info":[{"award-number":["P30-GM110758"]}],"id":[{"id":"10.13039\/100000057","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2019,3,1]]},"abstract":"<jats:p>The mechanism of thermal dry etching of cobalt films is discussed for a thermal process utilizing sequential exposures to chlorine gas and a diketone [either 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (hexafluoroacetylacetone, hfacH) or 2,4-pentanedione (acetylacetone, acacH)]. The process can be optimized experimentally to approach atomic layer etching (ALE); a sequential exposure to Cl2 and hfacH dry etchants at 140\u2009\u00b0C is shown to proceed efficiently. The use of acacH as a diketone does not result in ALE with chlorine even at 180\u2009\u00b0C, but the decrease of surface chlorine concentration and chemical reduction of cobalt is noted. However, thermal desorption analysis suggests that the reaction of chlorinated cobalt surface exposed to the ambient conditions (oxidized) with hfacH does produce volatile Co-containing products within the desired temperature range and the products contain Co3+. The effect of adsorption of ligands on the energy required to remove surface cobalt atoms is evaluated using the density functional theory.<\/jats:p>","DOI":"10.1116\/1.5082187","type":"journal-article","created":{"date-parts":[[2019,2,26]],"date-time":"2019-02-26T11:12:54Z","timestamp":1551179574000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":60,"title":["Molecular mechanisms of atomic layer etching of cobalt with sequential exposure to molecular chlorine and diketones"],"prefix":"10.1116","volume":"37","author":[{"given":"Mahsa","family":"Konh","sequence":"first","affiliation":[{"name":"Department of Chemistry and Biochemistry, University of Delaware 1 , Newark, Delaware 19716"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chuan","family":"He","sequence":"additional","affiliation":[{"name":"Department of Chemistry and Biochemistry, University of Delaware 1 , Newark, Delaware 19716"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xi","family":"Lin","sequence":"additional","affiliation":[{"name":"Department of Chemistry and Biochemistry, University of Delaware 1 , Newark, Delaware 19716"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiangyu","family":"Guo","sequence":"additional","affiliation":[{"name":"American Air Liquide 2 , Delaware Innovation Campus, 200 GBC Drive, Newark, Delaware 19702"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Venkateswara","family":"Pallem","sequence":"additional","affiliation":[{"name":"American Air Liquide 2 , Delaware Innovation Campus, 200 GBC Drive, Newark, Delaware 19702"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Robert L.","family":"Opila","sequence":"additional","affiliation":[{"name":"Department of Chemistry and Biochemistry, University of Delaware 1 , Newark, Delaware 19716"},{"name":"Department of Materials Science and Engineering, University of Delaware 3 , Newark, Delaware 19716"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Andrew V.","family":"Teplyakov","sequence":"additional","affiliation":[{"name":"Department of Chemistry and Biochemistry, University of Delaware 1 , Newark, Delaware 19716"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zijian","family":"Wang","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering, University of Delaware 3 , Newark, Delaware 19716"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bo","family":"Yuan","sequence":"additional","affiliation":[{"name":"Department of Chemistry and Biochemistry, University of Delaware 1 , Newark, Delaware 19716"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"20","published-online":{"date-parts":[[2019,2,26]]},"reference":[{"key":"2023062904012361200_c1","doi-asserted-by":"publisher","first-page":"12022","DOI":"10.1103\/PhysRevB.46.12022","volume":"46","year":"1992","journal-title":"Phys. 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