{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,9]],"date-time":"2026-01-09T12:49:53Z","timestamp":1767962993741,"version":"3.49.0"},"reference-count":12,"publisher":"American Vacuum Society","issue":"1","funder":[{"name":"EU","award":["CALIPSO 312284)"],"award-info":[{"award-number":["CALIPSO 312284)"]}]}],"content-domain":{"domain":["pubs.aip.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2017,1,1]]},"abstract":"<jats:p>The development of SiC wafers with properties suitable for electronic device fabrication is now well established commercially. A critical issue for developing metal\u2013oxide\u2013semiconductor field effect transistor devices of SiC is the choice of dielectric materials for surface passivation and insulating coatings. Although SiO2 grown thermally on SiC is a possibility for the gate dielectric, this system has a number of problems related to the higher band gap of SiC, which energetically favors more interface states than for SiO2 on Si, and the low dielectric constant of SiO2 leading to 2.5\u00d7 higher electric fields across the oxide than in the surface of SiC, and to a premature breakdown at the higher fields and higher temperatures that SiC devices are designed to operate under. As a replacement for SiO2, amorphous Al2O3 thin film coatings have some strong advocates, both for n- and p-type SiC, due to the value of its band gap and the position of its band edges with respect to the band edges of the underlying semiconductor, a number of other material properties, and not the least due to the advances of the atomic-layer-deposition process. Exploring the fact that the chemical bonding of Al2O3 is the strongest among the oxides and therefore stronger than in SiO2, the authors have previously shown how to form an Al2O3 film on Si (111) and Si (100), by simply depositing a few atomic layers of Al on top of an ultrathin (0.8\u2009nm) SiO2 film previously grown on Si surfaces [Si (111) and Si (100)] and heating this system up to around 600\u2009\u00b0C (all in ultrahigh vacuum). This converts all the SiO2 into a uniform layer of Al2O3 with an atomically sharp interface between the Al2O3 and the Si surface. In the present work, the same procedures are applied to form Al2O3 on a SiC film grown on top of Si (111). The results indicate that a similar process, resulting in a uniform layer of 1\u20132\u2009nm of Al2O3 with an atomically sharp Al2O3\/SiC interface, also works in this case.<\/jats:p>","DOI":"10.1116\/1.4972774","type":"journal-article","created":{"date-parts":[[2016,12,28]],"date-time":"2016-12-28T12:42:04Z","timestamp":1482928924000},"update-policy":"https:\/\/doi.org\/10.1063\/aip-crossmark-policy-page","source":"Crossref","is-referenced-by-count":5,"title":["Growth of aluminum oxide on silicon carbide with an atomically sharp interface"],"prefix":"10.1116","volume":"35","author":[{"given":"Ana Gomes","family":"Silva","sequence":"first","affiliation":[{"name":"Universidade Nova de Lisboa Departamento de F\u00edsica, Faculdade de Ci\u00eancias e Tecnologia, , P-2829-516 Caparica, Portugal"}]},{"given":"Kjeld","family":"Pedersen","sequence":"additional","affiliation":[{"name":"Aalborg University Department of Physics and Nanotechnology, , Skjernvej 4A, DK-9220 Aalborg East, Denmark"}]},{"given":"Zheshen","family":"Li","sequence":"additional","affiliation":[{"name":"Aarhus University ISA, Department of Physics and Astronomy, , Ny Munkegade 120, Building 1520, DK-8000 Aarhus C, Denmark"}]},{"given":"Jeanette","family":"Hvam","sequence":"additional","affiliation":[{"name":"University of Southern Denmark Department of Physics, Chemistry and Pharmacy, , Campusvej 55, DK-5230 Odense M, Denmark"}]},{"given":"Rajnish","family":"Dhiman","sequence":"additional","affiliation":[{"name":"University of Southern Denmark Department of Physics, Chemistry and Pharmacy, , Campusvej 55, DK-5230 Odense M, Denmark"}]},{"given":"Per","family":"Morgen","sequence":"additional","affiliation":[{"name":"University of Southern Denmark Department of Physics, Chemistry and Pharmacy, , Campusvej 55, DK-5230 Odense M, Denmark"}]}],"member":"20","published-online":{"date-parts":[[2016,12,27]]},"reference":[{"key":"2023062818551477900_c1","doi-asserted-by":"publisher","first-page":"012007","DOI":"10.1088\/1757-899X\/56\/1\/012007","volume":"56","year":"2014","journal-title":"IOP Conf. 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R.\u2008Albrechtslund, \u201cGrowth of carbon containing structures on Si-surfaces (in Danish),\u201d Master's thesis (University of Southern Denmark, 2012)."},{"key":"2023062818551477900_c7","doi-asserted-by":"crossref","first-page":"229","DOI":"10.1007\/1-4020-4594-8","volume-title":"Functional Properties of Nanostructured Materials","author":"Kassing","year":"2006"},{"key":"2023062818551477900_c8","doi-asserted-by":"publisher","first-page":"1208","DOI":"10.1016\/j.apsusc.2015.07.024","volume":"353","year":"2015","journal-title":"Appl. Surf. Sci."},{"key":"2023062818551477900_c9","doi-asserted-by":"publisher","first-page":"2","DOI":"10.1002\/sia.740010103","volume":"1","year":"1979","journal-title":"Surf. Interface Anal."},{"key":"2023062818551477900_c10","year":"2016"},{"key":"2023062818551477900_c11","doi-asserted-by":"publisher","first-page":"47","DOI":"10.1016\/j.susc.2013.04.006","volume":"615","year":"2013","journal-title":"Surf. 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