{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,14]],"date-time":"2026-10-14T04:16:25Z","timestamp":1791951385407,"version":"4.3.4"},"reference-count":75,"publisher":"American Association for the Advancement of Science (AAAS)","issue":"4","content-domain":{"domain":["www.science.org"],"crossmark-restriction":true},"short-container-title":["Sci. Adv."],"published-print":{"date-parts":[[2024,1,26]]},"abstract":"<jats:p>\n                    Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultradense and ultrafast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180\u00b0 switching of N\u00e9el vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite N\u00e9el vectors as binary \u201c0\u201d and \u201c1.\u201d However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90\u00b0 or 120\u00b0 switching of N\u00e9el vector, which unavoidably require multiple writing channels that contradict ultradense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier and experimentally achieve electrical 180\u00b0 switching of spin-splitting antiferromagnet Mn\n                    <jats:sub>5<\/jats:sub>\n                    Si\n                    <jats:sub>3<\/jats:sub>\n                    . Such a 180\u00b0 switching is read out by the N\u00e9el vector\u2013induced anomalous Hall effect. On the basis of our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high- and low-resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet.\n                  <\/jats:p>","DOI":"10.1126\/sciadv.adn0479","type":"journal-article","created":{"date-parts":[[2024,1,26]],"date-time":"2024-01-26T13:58:19Z","timestamp":1706277499000},"update-policy":"https:\/\/doi.org\/10.34133\/aaas_crossmark","source":"Crossref","is-referenced-by-count":168,"title":["Electrical 180\u00b0 switching of N\u00e9el vector in spin-splitting antiferromagnet"],"prefix":"10.1126","volume":"10","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-6152-0307","authenticated-orcid":true,"given":"Lei","family":"Han","sequence":"first","affiliation":[{"name":"Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, 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