{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,27]],"date-time":"2026-09-27T03:18:09Z","timestamp":1790479089793,"version":"4.1.0"},"reference-count":29,"publisher":"American Association for the Advancement of Science (AAAS)","issue":"47","content-domain":{"domain":["www.science.org"],"crossmark-restriction":true},"short-container-title":["Sci. Adv."],"published-print":{"date-parts":[[2024,11,22]]},"abstract":"<jats:p>By introducing first-order quantum phases as topological invariants, recent symmetry analysis\u2013based theories have reinvigorated magnetic quantum oscillations as a versatile quantum probe for unfolding the Fermi surface topology along with the geometry information, i.e., topo-Fermiology. Here, we demonstrate the comprehensive topo-Fermiology of high-mobility Rashba two-dimensional electron gases with ultragate tunability of spin-orbit coupling parameter in few-layer black arsenic. The remarkable consistencies with the key theoretical predictions of period doubling in quantum oscillations, gate-tunable aperiodic beating patterns, and the symmetry-enforced Landau level crossing phenomena controlled by the competition between Rashba coupling and the Zeeman interaction, which ultimately manifests as all odd-filling factor integer quantum Hall effect with superb sensitivity to quantum phases, establish topo-Fermiology as an indispensable methodology for studying topological quantum matters.<\/jats:p>","DOI":"10.1126\/sciadv.adp8208","type":"journal-article","created":{"date-parts":[[2024,11,20]],"date-time":"2024-11-20T18:59:41Z","timestamp":1732129181000},"update-policy":"https:\/\/doi.org\/10.34133\/aaas_crossmark","source":"Crossref","is-referenced-by-count":5,"title":["Topological Fermiology of gate-tunable Rashba electron gases"],"prefix":"10.1126","volume":"10","author":[{"ORCID":"https:\/\/orcid.org\/0009-0001-3385-6134","authenticated-orcid":true,"given":"Jie","family":"Hu","sequence":"first","affiliation":[{"name":"School of Physics and State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, P. 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China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3179-7019","authenticated-orcid":true,"given":"Chuanying","family":"Xi","sequence":"additional","affiliation":[{"name":"High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Guangli","family":"Kuang","sequence":"additional","affiliation":[{"name":"High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Li","family":"Pi","sequence":"additional","affiliation":[{"name":"High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3701-8119","authenticated-orcid":true,"given":"Kenji","family":"Watanabe","sequence":"additional","affiliation":[{"name":"National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1467-3105","authenticated-orcid":true,"given":"Takashi","family":"Taniguchi","sequence":"additional","affiliation":[{"name":"National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9599-7864","authenticated-orcid":true,"given":"Qing-Lin","family":"Xia","sequence":"additional","affiliation":[{"name":"School of Physics and State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, P. 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