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In wide-bandgap III-nitride semiconductors, the inherent polarization effects provide an alternative approach to engineering electrical properties. Here, we report the monolithic integration of polarization-doped InGaN p-channel FETs with polarization-doped GaN n-channel FETs for complementary logic (CL) circuitry. The enhancement-mode (E-mode) InGaN p-FET achieves a high current density exceeding 20 mA\/mm. We construct a series of III-nitride CL building blocks, including inverter, ring oscillator (RO), NAND, NOR, RS latch, and 6T-SRAM. The inverter exhibits a high maximum voltage gain of 154.1 V\/V, and the RO achieves a record short propagation delay per stage of 10.4 ns. Additionally, we demonstrate the monolithic integration of CL buffers with high-voltage GaN power transistors. These results establish the polarization-doped III-nitride CL platform as a promising solution for high-frequency power management ICs and harsh-environment electronics.<\/jats:p>","DOI":"10.1126\/sciadv.aec4563","type":"journal-article","created":{"date-parts":[[2026,8,7]],"date-time":"2026-08-07T17:59:18Z","timestamp":1786125558000},"update-policy":"https:\/\/doi.org\/10.34133\/aaas_crossmark","source":"Crossref","is-referenced-by-count":0,"title":["Monolithically integrating polarization-doped InGaN p-FET and GaN n-FET for complementary logic circuitry"],"prefix":"10.1126","volume":"12","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-0301-3312","authenticated-orcid":true,"given":"Jingjing","family":"Yu","sequence":"first","affiliation":[{"name":"School of Integrated Circuits, Peking University, Beijing, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Teng","family":"Li","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Peking University, Beijing, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yunhong","family":"Lao","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Peking University, Beijing, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3614-7306","authenticated-orcid":true,"given":"Junjie","family":"Yang","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Peking University, Beijing, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiawei","family":"Cui","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Peking University, Beijing, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sihang","family":"Liu","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Peking University, Beijing, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0008-8475-7049","authenticated-orcid":true,"given":"Han","family":"Yang","sequence":"additional","affiliation":[{"name":"School of Physics, Peking University, Beijing, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0001-5244-6843","authenticated-orcid":true,"given":"Youyi","family":"Yin","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Peking University, Beijing, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Maojun","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Peking University, Beijing, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5152-5075","authenticated-orcid":true,"given":"Xuelin","family":"Yang","sequence":"additional","affiliation":[{"name":"School of Physics, Peking University, Beijing, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kevin J.","family":"Chen","sequence":"additional","affiliation":[{"name":"Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2786-8400","authenticated-orcid":true,"given":"Bo","family":"Shen","sequence":"additional","affiliation":[{"name":"School of Physics, Peking University, Beijing, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6124-0110","authenticated-orcid":true,"given":"Jin","family":"Wei","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Peking University, Beijing, China."}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"221","reference":[{"key":"e_1_3_2_2_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-021-00611-y"},{"key":"e_1_3_2_3_2","doi-asserted-by":"publisher","DOI":"10.1038\/s44287-024-00135-5"},{"key":"e_1_3_2_4_2","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2020.3010471"},{"key":"e_1_3_2_5_2","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2023.3341053"},{"key":"e_1_3_2_6_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.56.R10024"},{"key":"e_1_3_2_7_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.106798"},{"key":"e_1_3_2_8_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.371396"},{"key":"e_1_3_2_9_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.371866"},{"key":"e_1_3_2_10_2","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2007.911060"},{"key":"e_1_3_2_11_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-025-01391-5"},{"key":"e_1_3_2_12_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-021-00550-8"},{"key":"e_1_3_2_13_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-022-00860-5"},{"key":"e_1_3_2_14_2","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2230312"},{"key":"e_1_3_2_15_2","doi-asserted-by":"crossref","unstructured":"M. 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