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Adv."],"published-print":{"date-parts":[[2026,2,13]]},"abstract":"<jats:p>\n                    Precise control over quantum dot (QD) position and size is critical for quantum electronics but typically requires complex nanofabrication. Here, we report a step-confined heteroprecursor supply (sc-HPS) strategy for growth of crystalline germanium (c-Ge) QDs at predefined step edges within planar ultrathin silicon nanowire (SiNW) channels, eliminating the need for high-resolution lithography. Unlike conventional in-plane solid-liquid-solid growth using a uniform amorphous silicon precursor, sc-HPS uses a spatially confined amorphous germanium (a-Ge) layer defined by oblique patterning of a SiO\n                    <jats:sub>2<\/jats:sub>\n                    \/a-Ge stack. This restricts Ge supply to a narrow strip along the step edge, enabling nucleation and tunable QD diameters of ~25\u00a0to 150 nm, sandwiched between two epitaxially connected SiNWs. The SiNW\/Ge-QD\/SiNW heterostructure forms a Si\/Ge interface that provides three-dimensional hole confinement. Single-hole transistors fabricated from these structures exhibit clear Coulomb oscillations and well-defined Coulomb diamonds up to 50 K, demonstrating single-hole charging behavior. This scalable and lithography-free approach enables previously unexplored opportunities in hole-based quantum devices and nanoelectronic architectures.\n                  <\/jats:p>","DOI":"10.1126\/sciadv.aed0335","type":"journal-article","created":{"date-parts":[[2026,2,13]],"date-time":"2026-02-13T18:59:07Z","timestamp":1771009147000},"update-policy":"https:\/\/doi.org\/10.34133\/aaas_crossmark","source":"Crossref","is-referenced-by-count":2,"title":["Lithography-free, site-controlled germanium quantum dots in silicon nanowires for single-hole transistors operating up to 50 K"],"prefix":"10.1126","volume":"12","author":[{"ORCID":"https:\/\/orcid.org\/0009-0008-2522-5165","authenticated-orcid":true,"given":"Junyang","family":"An","sequence":"first","affiliation":[{"name":"School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhiyan","family":"Hu","sequence":"additional","affiliation":[{"name":"School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhengyi","family":"He","sequence":"additional","affiliation":[{"name":"School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3995-9580","authenticated-orcid":true,"given":"Songlin","family":"Li","sequence":"additional","affiliation":[{"name":"School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0003-3990-6053","authenticated-orcid":true,"given":"Xiaopan","family":"Song","sequence":"additional","affiliation":[{"name":"School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9140-9554","authenticated-orcid":true,"given":"Lijuan","family":"Zhao","sequence":"additional","affiliation":[{"name":"Materials Genome Institute, Shanghai University, Shanghai 200444, P. 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China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1851-220X","authenticated-orcid":true,"given":"Junzhuan","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0801-5210","authenticated-orcid":true,"given":"Linwei","family":"Yu","sequence":"additional","affiliation":[{"name":"School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China."},{"name":"School of Electronic and Optical Engineering, Nanjing University of Posts and Teclecommunications, Nanjing 210045, China."}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"221","reference":[{"key":"e_1_3_2_2_2","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.79.1217"},{"key":"e_1_3_2_3_2","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.95.025003"},{"key":"e_1_3_2_4_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-019-1381-2"},{"key":"e_1_3_2_5_2","doi-asserted-by":"publisher","DOI":"10.1126\/science.1116955"},{"key":"e_1_3_2_6_2","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2013.168"},{"key":"e_1_3_2_7_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41578-020-00262-z"},{"key":"e_1_3_2_8_2","doi-asserted-by":"publisher","DOI":"10.1126\/science.ado5915"},{"key":"e_1_3_2_9_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevA.57.120"},{"key":"e_1_3_2_10_2","doi-asserted-by":"publisher","DOI":"10.1070\/1063-7869\/44\/10S\/S29"},{"key":"e_1_3_2_11_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.115.127001"},{"key":"e_1_3_2_12_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.95.076805"},{"key":"e_1_3_2_13_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.100.041304"},{"key":"e_1_3_2_14_2","doi-asserted-by":"crossref","unstructured":"R. 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