{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,22]],"date-time":"2026-09-22T19:36:01Z","timestamp":1790105761187,"version":"4.0.1"},"reference-count":55,"publisher":"American Association for the Advancement of Science (AAAS)","issue":"29","funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["T2394474"],"award-info":[{"award-number":["T2394474"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["T2394473"],"award-info":[{"award-number":["T2394473"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62271026"],"award-info":[{"award-number":["62271026"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["12104031"],"award-info":[{"award-number":["12104031"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62401026"],"award-info":[{"award-number":["62401026"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100013290","name":"National Key Research and Development Program of China Stem Cell and Translational Research","doi-asserted-by":"publisher","award":["2024YFA1408802"],"award-info":[{"award-number":["2024YFA1408802"]}],"id":[{"id":"10.13039\/501100013290","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100013290","name":"National Key Research and Development Program of China Stem Cell and Translational Research","doi-asserted-by":"publisher","award":["2022YFA1402604"],"award-info":[{"award-number":["2022YFA1402604"]}],"id":[{"id":"10.13039\/501100013290","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100013290","name":"National Key Research and Development Program of China Stem Cell and Translational Research","doi-asserted-by":"publisher","award":["2022YFB4400200"],"award-info":[{"award-number":["2022YFB4400200"]}],"id":[{"id":"10.13039\/501100013290","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012152","name":"National Postdoctoral Program for Innovative Talents","doi-asserted-by":"publisher","award":["BX20240455"],"award-info":[{"award-number":["BX20240455"]}],"id":[{"id":"10.13039\/501100012152","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012226","name":"Fundamental Research Funds for the Central Universities","doi-asserted-by":"publisher","award":["501XSKC2025142001"],"award-info":[{"award-number":["501XSKC2025142001"]}],"id":[{"id":"10.13039\/501100012226","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002858","name":"China Postdoctoral Science Foundation","doi-asserted-by":"publisher","award":["2023M740177"],"award-info":[{"award-number":["2023M740177"]}],"id":[{"id":"10.13039\/501100002858","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012226","name":"Fundamental Research Funds for the Central Universities","doi-asserted-by":"publisher","award":["YWF-23-Q-1089"],"award-info":[{"award-number":["YWF-23-Q-1089"]}],"id":[{"id":"10.13039\/501100012226","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Beijing Outstanding Young Scientist Program"},{"name":"New Cornerstone Science Foundation","award":["XPLORER PRIZE"],"award-info":[{"award-number":["XPLORER PRIZE"]}]}],"content-domain":{"domain":["www.science.org"],"crossmark-restriction":true},"short-container-title":["Sci. Adv."],"published-print":{"date-parts":[[2026,7,17]]},"abstract":"<jats:p>Ultrafast switching of magnetic tunnel junctions (MTJs) is essential for future high-bandwidth memory and in-memory computing. However, state-of-the-art electrical switching of MTJs remains constrained to hundreds of picoseconds, leaving a substantial gap between memory and processors. Here, we experimentally demonstrate field-free switching of three-terminal MTJs using picosecond electrical pulses driven by spin-orbit torque (SOT), surpassing the speed limit by an order of magnitude. We further use voltage-gated (VG) effect to probe SOT switching mechanisms over wide pulse-width ranges and identify a nonmonotonic VG-SOT efficiency. While the efficiency is pronounced under long-pulse excitation, it diminishes in the subnanosecond regime but reemerges as the pulse width scales down to 13.2 ps, yielding an energy consumption about 30 fJ per bit. Micromagnetic analysis reveals that, from dc to picosecond timescale, the dominant magnetization switching dynamics evolve from thermally activated reversal to incoherent precession to coherent precession. These results establish picosecond VG-SOT as a pathway toward ultrafast and energy-efficient memory and logic.<\/jats:p>","DOI":"10.1126\/sciadv.aed0607","type":"journal-article","created":{"date-parts":[[2026,7,17]],"date-time":"2026-07-17T17:58:48Z","timestamp":1784311128000},"update-policy":"https:\/\/doi.org\/10.34133\/aaas_crossmark","source":"Crossref","is-referenced-by-count":3,"title":["Picosecond switching of magnetic tunnel junctions by spin-orbit torque"],"prefix":"10.1126","volume":"12","author":[{"ORCID":"https:\/\/orcid.org\/0009-0009-3565-4331","authenticated-orcid":true,"given":"Chen","family":"Xiao","sequence":"first","affiliation":[{"name":"State Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, China."},{"name":"Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9240-8086","authenticated-orcid":true,"given":"Wenlong","family":"Cai","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, China."},{"name":"Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hongchao","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0004-9095-7806","authenticated-orcid":true,"given":"Dinghao","family":"Ma","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5060-4465","authenticated-orcid":true,"given":"Kaihua","family":"Cao","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ao","family":"Du","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shiyang","family":"Lu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8798-6826","authenticated-orcid":true,"given":"Xiangyu","family":"Zheng","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7027-4942","authenticated-orcid":true,"given":"Boyu","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0004-1562-2539","authenticated-orcid":true,"given":"Hongxi","family":"Liu","sequence":"additional","affiliation":[{"name":"Truth Memory Corporation, Beijing China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1294-3220","authenticated-orcid":true,"given":"Kewen","family":"Shi","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8088-0404","authenticated-orcid":true,"given":"Weisheng","family":"Zhao","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, China."},{"name":"Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China."}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"221","reference":[{"key":"e_1_3_2_2_2","doi-asserted-by":"publisher","DOI":"10.1038\/s44287-023-00002-9"},{"key":"e_1_3_2_3_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-020-0461-5"},{"key":"e_1_3_2_4_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-023-00977-1"},{"key":"e_1_3_2_5_2","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202510319"},{"key":"e_1_3_2_6_2","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2021.3084997"},{"key":"e_1_3_2_7_2","doi-asserted-by":"publisher","DOI":"10.1038\/s44287-024-00111-z"},{"key":"e_1_3_2_8_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-024-07131-7"},{"key":"e_1_3_2_9_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41565-024-01827-7"},{"key":"e_1_3_2_10_2","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.96.015005"},{"key":"e_1_3_2_11_2","doi-asserted-by":"crossref","unstructured":"G. Hu C. Safranski J. Z. Sun P. Hashemi S. L. Brown J. Bruley L. Buzi C. P. D\u2019Emic E. Galligan M. G. Gottwald O. Gunawan J. Lee S. Karimeddiny P. L. Trouilloud D. C. Worledge Double spin-torque magnetic tunnel junction devices for last-level cache applications. 2022 IEEE International Electron Devices Meeting San Francisco CA USA 3\u20137 December 2022.","DOI":"10.1109\/IEDM45625.2022.10019402"},{"key":"e_1_3_2_12_2","unstructured":"Samsung reveals eMRAM and BCD roadmap while pushing automotive chip down to 2 nm (2023); https:\/\/www.digitimes.com\/news\/a20231020PD215\/automotive-ic-ev-memory-chips-samsung.html."},{"key":"e_1_3_2_13_2","doi-asserted-by":"crossref","unstructured":"W Z. Wang Z. Wei G. Wu L. Hu M. Wu U. Chandrasekhar T. Tran M. Baraji J. Li E. Abedifard Y. Huai Dual QSPI 8 Gb STT-MRAM for space applications in 2023 IEEE International Electron Devices Meeting (IEEE 2023).","DOI":"10.1109\/IEDM45741.2023.10413785"},{"key":"e_1_3_2_14_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-021-04196-6"},{"key":"e_1_3_2_15_2","doi-asserted-by":"publisher","DOI":"10.1007\/s11433-022-2012-2"},{"key":"e_1_3_2_16_2","doi-asserted-by":"publisher","DOI":"10.1007\/s11432-020-3189-x"},{"key":"e_1_3_2_17_2","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202004645"},{"key":"e_1_3_2_18_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.94.214432"},{"key":"e_1_3_2_19_2","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2021.3069391"},{"key":"e_1_3_2_20_2","doi-asserted-by":"publisher","DOI":"10.1126\/science.1218197"},{"key":"e_1_3_2_21_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.109.096602"},{"key":"e_1_3_2_22_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-019-0345-8"},{"key":"e_1_3_2_23_2","doi-asserted-by":"crossref","unstructured":"K. Cai G. Talmelli K. Fan S. Van Beek V. Kateel M. Gupta M. G. Monteiro M. B. Chroud G. Jayakumar A. Trovato S. Rao G. S. Kar S. Couet First demonstration of field-free perpendicular SOT-MRAM for ultrafast and high-density embedded memories in 2022 IEEE International Electron Devices Meeting (IEEE 2022).","DOI":"10.1109\/IEDM45625.2022.10019360"},{"key":"e_1_3_2_24_2","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202202478"},{"key":"e_1_3_2_25_2","volume":"17","unstructured":"Z. Chen, D. Zhu, A. Du, Y. Shi, W. Cai, Z. Wang, Y. Duan, S. Lu, K. Cao, H. Zhang, D. Zhang, H. Liu, K. Shi, W. Zhao, Nanoscale exchange-bias magnetic tunnel junctions enabled memristive synapse and leaky-integrate-fire neuron for neuromorphic computing. Nat. Commun. 17, 4362 (2026).","journal-title":"Nat. Commun."},{"key":"e_1_3_2_26_2","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2016.29"},{"key":"e_1_3_2_27_2","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2015.252"},{"key":"e_1_3_2_28_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-018-0160-7"},{"key":"e_1_3_2_29_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-024-48631-4"},{"key":"e_1_3_2_30_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-018-0131-z"},{"key":"e_1_3_2_31_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41565-019-0607-7"},{"key":"e_1_3_2_32_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-024-46113-1"},{"key":"e_1_3_2_33_2","doi-asserted-by":"crossref","unstructured":"H. Honjo T. V. A. Nguyen T. Watanabe T. Nasuno C. Zhang T. Tanigawa S. Miura H. Inoue M. Niwa T. Yoshiduka Y. Noguchi M. Yasuhira A. Tamakoshi M. Natsui Y. Ma H. Koike Y. Takahashi K. Furuya H. Shen S. Fukami H. Sato S. Ikeda T. Hanyu H. Ohno T. Endoh First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400\u00b0C thermal tolerance by canted SOT structure and its advanced patterning\/SOT channel technology in 2019 IEEE International Electron Devices Meeting (IEEE 2019).","DOI":"10.1109\/IEDM19573.2019.8993443"},{"key":"e_1_3_2_34_2","doi-asserted-by":"crossref","unstructured":"C. Jiang S. Lu Z. Zhang X. Fan D. Xiong J. Li H. Liu G. Wang H. Zhang H. Jin K. Cao D. Zhang Z. Wang W. Zhao Demonstration of 128 kb SOT-MRAM chip with 5 ns write and 15 ns read speed high endurance over 10 10 and low ECC-on bit error rate in 2024 IEEE International Electron Devices Meeting (IEEE 2024).","DOI":"10.1109\/IEDM50854.2024.10873510"},{"key":"e_1_3_2_35_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-025-01434-x"},{"key":"e_1_3_2_36_2","doi-asserted-by":"publisher","DOI":"10.1126\/science.1136629"},{"key":"e_1_3_2_37_2","doi-asserted-by":"publisher","DOI":"10.1038\/nmat3171"},{"key":"e_1_3_2_38_2","doi-asserted-by":"crossref","unstructured":"S. Peng J. Lu W. Li L. Wang H. Zhang X. Li K. Wang W. Zhao Field-free switching of perpendicular magnetization through voltage-gated spin-orbit torque in 2019 IEEE International Electron Devices Meeting (IEEE 2019).","DOI":"10.1109\/IEDM19573.2019.8993513"},{"key":"e_1_3_2_39_2","unstructured":"K. Cai S. Van Beek S. Rao K. Fan M. Gupta V. D. Nguyen G. Jayakumar G. Talmelli S. Couet G. S. Kar Selective operations of multi-pillar SOT-MRAM for high density and low power embedded memories in IEEE Symposium on VLSI Technology and Circuits (IEEE 2024)."},{"key":"e_1_3_2_40_2","doi-asserted-by":"crossref","unstructured":"H. Yoda N. Shimomura Y. Ohsawa S. Shirotori Y. Kato T. Inokuchi Y. Kamiguchi B. Altansargai Y. Saito K. Koi H. Sugiyama S. Oikawa M. Shimizu M. Ishikawa K. Ikegami A. Kurobe Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density in 2016 IEEE International Electron Devices Meeting (IEEE 2016).","DOI":"10.7567\/SSDM.2017.A-6-01"},{"key":"e_1_3_2_41_2","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2010.2066530"},{"key":"e_1_3_2_42_2","doi-asserted-by":"crossref","unstructured":"K. Mistry C. Allen C. Auth B. Beattie D. Bergstrom M. Bost M. Brazier M. Buehler A. Cappellani R. Chau C.-H. Choi G. Ding K. Fischer T. Ghani R. Grover W. Han D. Hanken M. Hattendorf J. He J. Hicks R. Huessner D. Ingerly P. Jain R. James L. Jong S. Joshi C. Kenyon K. Kuhn K. Lee H. Liu J. Maiz B. McIntyre P. Moon J. Neirynck S. Pae C. Parker D. Parsons C. Prasad L. Pipes M. Prince P. Ranade T. Reynolds J. Sandford L. Shifren J. Sebastian J. Seiple D. Simon S. Sivakumar P. Smith C. Thomas T. Troeger P. Vandervoorn S. Williams K. Zawadzki A 45nm Logic Technology with High-k+Metal Gate Transistors Strained Silicon 9 Cu Interconnect Layers 193nm Dry Patterning and 100% Pb-free Packaging in 2007 IEEE International Electron Devices Meeting (IEEE 2007).","DOI":"10.1109\/IEDM.2007.4418914"},{"key":"e_1_3_2_43_2","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.1603117"},{"key":"e_1_3_2_44_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-020-00488-3"},{"key":"e_1_3_2_45_2","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.adh5562"},{"key":"e_1_3_2_46_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41565-024-01788-x"},{"key":"e_1_3_2_47_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.4948763"},{"key":"e_1_3_2_48_2","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.5c12183"},{"key":"e_1_3_2_49_2","doi-asserted-by":"crossref","unstructured":"M. J. Donahue D. G. Porter OOMMF user\u2019s guide version 1.0 (1999).","DOI":"10.6028\/NIST.IR.6376"},{"key":"e_1_3_2_50_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.15.064015"},{"key":"e_1_3_2_51_2","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2023.3262666"},{"key":"e_1_3_2_52_2","doi-asserted-by":"publisher","DOI":"10.1007\/s11432-023-3809-3"},{"key":"e_1_3_2_53_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.69.134416"},{"key":"e_1_3_2_54_2","doi-asserted-by":"publisher","DOI":"10.1143\/APEX.4.043005"},{"key":"e_1_3_2_55_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.92.088302"},{"key":"e_1_3_2_56_2","first-page":"104","article-title":"Thermally activated switching of perpendicular magnet by spin-orbit spin torque","volume":"7","author":"Lee K. S.","year":"2014","unstructured":"K. S. Lee, S. W. Lee, B. C. Min, K. J. Lee, Thermally activated switching of perpendicular magnet by spin-orbit spin torque. Appl. Phys. Lett. 7, 104 (2014).","journal-title":"Appl. Phys. Lett."}],"container-title":["Science Advances"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.science.org\/doi\/pdf\/10.1126\/sciadv.aed0607","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,7,17]],"date-time":"2026-07-17T17:59:30Z","timestamp":1784311170000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.science.org\/doi\/10.1126\/sciadv.aed0607"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,7,17]]},"references-count":55,"journal-issue":{"issue":"29","published-print":{"date-parts":[[2026,7,17]]}},"alternative-id":["10.1126\/sciadv.aed0607"],"URL":"https:\/\/doi.org\/10.1126\/sciadv.aed0607","relation":{},"ISSN":["2375-2548"],"issn-type":[{"value":"2375-2548","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,7,17]]},"assertion":[{"value":"2025-10-13","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2026-06-10","order":2,"name":"accepted","label":"Accepted","group":{"name":"publication_history","label":"Publication History"}},{"value":"2026-07-17","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"eaed0607"}}