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In this work, we fabricate and measure 300 mm-compatible SOT-MRAM with 150% tunnel magnetoresistance (TMR) ratio, fast (2 ns) and low voltage (&lt;1 V) operation, low energy dissipation (2 pJ), low write noise (0.1%), and low device-to-device variation of 10%. SOT-MRAM characteristics were shown to be effective for inference on calibrated models. The bi-stable anisotropy and stochastic switching of SOT-MRAM was leveraged for binary neural network training, able to reach ideal accuracy for a single device. Lastly, the devices were evaluated on probabilistic graph modeling and the interplay of TMR ratio and probability distribution is analyzed. Through these results, SOT-MRAM is shown to be a uniquely effective candidate for implementation of crossbar accelerators in memory- and energy-limited applications.<\/jats:p>","DOI":"10.1126\/sciadv.aee6952","type":"journal-article","created":{"date-parts":[[2026,8,28]],"date-time":"2026-08-28T17:58:31Z","timestamp":1787939911000},"update-policy":"https:\/\/doi.org\/10.34133\/aaas_crossmark","source":"Crossref","is-referenced-by-count":0,"title":["Wafer-scale SOT-MRAM for analog crossbar array applications"],"prefix":"10.1126","volume":"12","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-1864-5734","authenticated-orcid":true,"given":"Samuel","family":"Liu","sequence":"first","affiliation":[{"name":"Chandra Family Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, USA."},{"name":"Microelectronics Research Center, The University of Texas at Austin, Austin, TX, USA."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Vivian","family":"Rogers","sequence":"additional","affiliation":[{"name":"Chandra Family Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, USA."},{"name":"Microelectronics Research Center, The University of Texas at Austin, Austin, TX, USA."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3732-1652","authenticated-orcid":true,"given":"Chen-Yu","family":"Hu","sequence":"additional","affiliation":[{"name":"Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ming-Yuan","family":"Song","sequence":"additional","affiliation":[{"name":"Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8698-1281","authenticated-orcid":true,"given":"Xinyu","family":"Bao","sequence":"additional","affiliation":[{"name":"Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4805-2112","authenticated-orcid":true,"given":"Jean Anne C.","family":"Incorvia","sequence":"additional","affiliation":[{"name":"Chandra Family Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, USA."},{"name":"Microelectronics Research Center, The University of Texas at Austin, Austin, TX, USA."}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"221","reference":[{"key":"e_1_3_2_2_2","doi-asserted-by":"publisher","DOI":"10.1088\/2399-1984\/ad299a"},{"key":"e_1_3_2_3_2","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2020.3003007"},{"key":"e_1_3_2_4_2","doi-asserted-by":"publisher","DOI":"10.1038\/s41563-019-0291-x"},{"key":"e_1_3_2_5_2","doi-asserted-by":"crossref","unstructured":"P. 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