{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,29]],"date-time":"2026-09-29T00:04:09Z","timestamp":1790640249177,"version":"4.1.0"},"reference-count":16,"publisher":"American Association for the Advancement of Science (AAAS)","issue":"6349","funder":[{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","award":["award334730"],"award-info":[{"award-number":["award334730"]}],"id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","award":["Award 1507013"],"award-info":[{"award-number":["Award 1507013"]}],"id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001602","name":"Science Foundation Ireland","doi-asserted-by":"publisher","award":["award334727"],"award-info":[{"award-number":["award334727"]}],"id":[{"id":"10.13039\/501100001602","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001602","name":"Science Foundation Ireland","doi-asserted-by":"publisher","award":["12\/IA\/1482"],"award-info":[{"award-number":["12\/IA\/1482"]}],"id":[{"id":"10.13039\/501100001602","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001602","name":"Science Foundation Ireland","doi-asserted-by":"publisher","award":["award334728"],"award-info":[{"award-number":["award334728"]}],"id":[{"id":"10.13039\/501100001602","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001602","name":"Science Foundation Ireland","doi-asserted-by":"publisher","award":["12\/RC\/2278"],"award-info":[{"award-number":["12\/RC\/2278"]}],"id":[{"id":"10.13039\/501100001602","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Science"],"published-print":{"date-parts":[[2017,7,28]]},"abstract":"<jats:title>Flat-out failure of copper films<\/jats:title>\n          <jats:p>\n            As integrated circuits shrink in size, so does their nanocrystalline metal wiring. Defects at the interfaces between crystallites (grain boundaries) can degrade wires' electrical and thermal conductivity, as well as their longevity. Using scanning tunneling microscopy, Zhang\n            <jats:italic>et al.<\/jats:italic>\n            showed that the surfaces of nanocrystalline copper films are not flat but rather have ridges and valleys created by the grains rotating out of plane, which then introduces grain boundary defects. Such defects might be avoided if films of different orientations could be grown.\n          <\/jats:p>\n          <jats:p>\n            <jats:italic>Science<\/jats:italic>\n            , this issue p.\n            <jats:related-article xmlns:xlink=\"http:\/\/www.w3.org\/1999\/xlink\" ext-link-type=\"doi\" issue=\"6349\" page=\"397\" related-article-type=\"in-this-issue\" vol=\"357\" xlink:href=\"10.1126\/science.aan4797\">397<\/jats:related-article>\n          <\/jats:p>","DOI":"10.1126\/science.aan4797","type":"journal-article","created":{"date-parts":[[2017,7,27]],"date-time":"2017-07-27T17:50:40Z","timestamp":1501177840000},"page":"397-400","source":"Crossref","is-referenced-by-count":62,"title":["Nanocrystalline copper films are never flat"],"prefix":"10.1126","volume":"357","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-3512-4586","authenticated-orcid":false,"given":"Xiaopu","family":"Zhang","sequence":"first","affiliation":[{"name":"School of Chemistry, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), Trinity College Dublin, Dublin 2, Ireland."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jian","family":"Han","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8617-4164","authenticated-orcid":false,"given":"John J.","family":"Plombon","sequence":"additional","affiliation":[{"name":"Components Research, Intel Corporation, Hillsboro, OR 97124, USA."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0612-8622","authenticated-orcid":false,"given":"Adrian P.","family":"Sutton","sequence":"additional","affiliation":[{"name":"Department of Physics, Imperial College London, Exhibition Road, London SW7 2AZ, UK."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6038-020X","authenticated-orcid":false,"given":"David J.","family":"Srolovitz","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA."},{"name":"Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, PA 19104, USA."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3229-8038","authenticated-orcid":false,"given":"John J.","family":"Boland","sequence":"additional","affiliation":[{"name":"School of Chemistry, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), Trinity College Dublin, Dublin 2, Ireland."}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"221","reference":[{"key":"e_1_3_2_2_2","unstructured":"Semiconductor Industry Association Interconnects Section in International Technology Roadmap for Semiconductors (ITRS) (Semiconductor Industry Association 2013)."},{"key":"e_1_3_2_3_2","doi-asserted-by":"publisher","DOI":"10.1146\/annurev-matsci-082908-145415"},{"key":"e_1_3_2_4_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.4832615"},{"key":"e_1_3_2_5_2","doi-asserted-by":"publisher","DOI":"10.1016\/j.mser.2010.09.001"},{"key":"e_1_3_2_6_2","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2010.2070470"},{"key":"e_1_3_2_7_2","doi-asserted-by":"publisher","DOI":"10.1146\/annurev.matsci.30.1.229"},{"key":"e_1_3_2_8_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.88.206106"},{"key":"e_1_3_2_9_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.65.1607"},{"key":"e_1_3_2_10_2","doi-asserted-by":"publisher","DOI":"10.1080\/14786437108217419"},{"key":"e_1_3_2_12_2","unstructured":"J. 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