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We demonstrate uniform, wafer-scale synthesis and back-end-of-line\u2013compatible integration of ultrathin van der Waals (vdW) high-dielectric constant ferroelectric oxide Bi\n                    <jats:sub>2<\/jats:sub>\n                    SeO\n                    <jats:sub>5<\/jats:sub>\n                    , retaining an optimal coercive field and robust ferroelectricity at monolayer thickness. Ultrathin vdW ferroelectric oxides formed atomically uniform interfaces with two-dimensional semiconductors and yielded ferroelectric field-effect transistor (FeFET) arrays with a low operating voltage (0.8 volts), exceptional cycling endurance (&gt;1.5 \u00d7 10\n                    <jats:sup>12<\/jats:sup>\n                    cycles), fast write speed (20 nanoseconds), high on\/off ratio (10\n                    <jats:sup>6<\/jats:sup>\n                    ), 10-year retention, ultralow energy consumption (2.8 femtojoules per bit per square micrometer), and &lt;5% device-to-device variation. Reconfigurable logic-in-memory circuits with these FeFETs function at supply voltages of &lt;1 volt.\n                  <\/jats:p>","DOI":"10.1126\/science.adz1655","type":"journal-article","created":{"date-parts":[[2026,1,29]],"date-time":"2026-01-29T19:01:14Z","timestamp":1769713274000},"update-policy":"https:\/\/doi.org\/10.34133\/aaas_crossmark","source":"Crossref","is-referenced-by-count":17,"title":["Wafer-scale ultrathin and uniform van der Waals ferroelectric oxide"],"prefix":"10.1126","volume":"391","author":[{"ORCID":"https:\/\/orcid.org\/0009-0004-6785-9984","authenticated-orcid":true,"given":"Qinci","family":"Wu","sequence":"first","affiliation":[{"name":"Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, P. R. 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