{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,10]],"date-time":"2026-09-10T18:10:28Z","timestamp":1789063828620,"version":"build-2803163510"},"reference-count":49,"publisher":"American Association for the Advancement of Science (AAAS)","issue":"6816","funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62504178"],"award-info":[{"award-number":["62504178"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62025402"],"award-info":[{"award-number":["62025402"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["92264101"],"award-info":[{"award-number":["92264101"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"the National Science and Technology Major Project","award":["2022ZD0119002"],"award-info":[{"award-number":["2022ZD0119002"]}]},{"name":"the Major Program of Zhejiang Natural Science Foundation","award":["LD25F040004"],"award-info":[{"award-number":["LD25F040004"]}]}],"content-domain":{"domain":["www.science.org"],"crossmark-restriction":true},"short-container-title":["Science"],"published-print":{"date-parts":[[2026,9,10]]},"abstract":"<jats:p>\n                    Wurtzite ferroelectrics could provide a route to wafer-scale integrated ferroelectric memories but are limited by endurance, typically failing at ~10\n                    <jats:sup>8<\/jats:sup>\n                    cycles. We identified nitrogen-vacancy (\n                    <jats:italic toggle=\"yes\">V<\/jats:italic>\n                    <jats:sub>N<\/jats:sub>\n                    ) clustering and long-range percolative migration as the defect-mediated pathways that drive leakage-current growth and dielectric breakdown. We combined a spatially engineered aluminum scandium nitride\/aluminum nitride (AlScN\/AlN) superlattice with a dynamic recovery protocol to spatially and energetically confine\n                    <jats:italic toggle=\"yes\">V<\/jats:italic>\n                    <jats:sub>N<\/jats:sub>\n                    evolution that stabilized defect topology under cyclic electrical stress and suppressed hard breakdown and ferroelectric degradation. We demonstrated endurance beyond 10\n                    <jats:sup>10<\/jats:sup>\n                    cycles in wurtzite ferroelectrics under a complete-switching criterion (remnant polarization \u2265 100 microcoulombs per square centimeter). These findings establish\n                    <jats:italic toggle=\"yes\">V<\/jats:italic>\n                    <jats:sub>N<\/jats:sub>\n                    confinement as a scalable defect-topology framework that couples atomic-scale defect stability to reliable ultradense ferroelectric memories and provide guidance for next-generation nonvolatile memory technologies.\n                  <\/jats:p>","DOI":"10.1126\/science.aec7337","type":"journal-article","created":{"date-parts":[[2026,9,10]],"date-time":"2026-09-10T18:00:33Z","timestamp":1789063233000},"page":"1134-1138","update-policy":"https:\/\/doi.org\/10.34133\/aaas_crossmark","source":"Crossref","is-referenced-by-count":0,"title":["Endurance beyond 10 billion cycles in wurtzite ferroelectrics by confining nitrogen vacancies"],"prefix":"10.1126","volume":"393","author":[{"ORCID":"https:\/\/orcid.org\/0009-0001-3584-3070","authenticated-orcid":true,"given":"Ruiqing","family":"Wang","sequence":"first","affiliation":[{"name":"Faculty of Integrated Circuit, Xidian University, Xi\u2019an, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2158-555X","authenticated-orcid":true,"given":"Feng","family":"Zhu","sequence":"additional","affiliation":[{"name":"TRACE EM Unit and Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, China."}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0001-2734-6920","authenticated-orcid":true,"given":"Haoji","family":"Qian","sequence":"additional","affiliation":[{"name":"Hangzhou Institute of Technology, Xidian University, Hangzhou, 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