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We developed an atomic-scale step-by-step evaporation method to directly grow single-crystal metals on monolayer semiconductors with clean interfaces. This method accesses a distinct growth-kinetic window that suppresses secondary nucleation and promotes lateral coalescence, enabling van der Waals epitaxy of diverse metals\u2014including bismuth, silver, indium, gold, and palladium\u2014on molybdenum disulfide (MoS\n                    <jats:sub>2<\/jats:sub>\n                    ) and tungsten diselenide (WSe\n                    <jats:sub>2<\/jats:sub>\n                    ). The single-crystal metals support ultrathin conduction, provide spatially uniform work functions, and exhibit improved thermal robustness. As contacts, they show minimal Fermi-level pinning, approaching the Schottky\u2013Mott limit. 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